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MPF4392

Onsemi

MPF4392 by Onsemi

The Onsemi MPF4392 is a N-CHANNEL FET for SWITCHING applications. With a 30V DS Breakdown Voltage and 60 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This THROUGH-HOLE transistor has a max power dissipation of 0.625W and can withstand temperatures up to 150 °C.

Median Price

$1.260

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Master Electronics

USA . 6,307 parts In-Stock

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$0.086

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$0.084

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$0.079

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$0.075

6,307

$0.086

$0.084

$0.079

$0.075

Verical

USA . 6,123 parts In-Stock

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$2.434

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$0.632

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$0.563

6,123

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$2.434

$0.632

$0.563

Distributors (In-Stock)

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Voyager Components

USA . 1 parts In-Stock

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$0.647

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$0.647

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$0.647

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$0.647

1

$0.647

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$0.647

$0.647

Vyrian

USA . 485 parts In-Stock

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$1.650

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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Digiode

USA . 1,780 parts In-Stock

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Anansix

USA . 1,053 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 547 parts In-Stock

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R&J Components

USA . 475 parts In-Stock

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Sunrise Surplus Inc.

USA . 26 parts In-Stock

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Electronic Expediters

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Semi Source

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MISTER SPROCKETS

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Manoshevitz Elec. Sales

Israel . 8 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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Sogenti Electronics

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Distributors (Availability)

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Corohmni

South Africa . 294 parts In-Stock

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$0.647

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QUARKTWIN TECHNOLOGY LTD

USA . 13,107 parts In-Stock

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SupplyDigital Components

Austria . 8,347 parts In-Stock

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Problanco Electronics

Mexico . 6,309 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,991 parts In-Stock

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Component Stockers USA

USA . 4,815 parts In-Stock

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$1.590

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$0.460

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Kulean Microsystems

USA . 3,929 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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TANS Electronics

Latvia . 1,523 parts In-Stock

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Assy Fe

Spain . 547 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Overview

Discover the power of the MPF4392 by Onsemi, a top-quality Small Signal Field Effect Transistor that offers unparalleled performance in switching applications. With its N-CHANNEL configuration and DEPLETION MODE operation, this transistor ensures optimal efficiency and reliability. Designed with precision and expertise by Onsemi, this product guarantees superior functionality and durability. Whether you're in need of a reliable solution for your electronic projects or industrial applications, the MPF4392 delivers exceptional value and performance that will exceed your expectations. Elevate your projects with the unmatched quality and benefits of the MPF4392 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower on-resistance, making them suitable for high-speed switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and allows for easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation, making it ideal for efficient power management.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltage levels without breakdown, ensuring reliable operation in demanding environments.

Maximum Power Dissipation (Abs): 0.625 W

The low power dissipation of 0.625W ensures efficient operation and helps prevent overheating in the circuit.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, making this FET suitable for amplification and switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high-temperature environments and maintain stable performance under elevated temperatures.

Maximum Drain-Source On Resistance: 60 ohm

The low on-resistance of 60 ohms reduces power losses and improves efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 3.5 pF

The low feedback capacitance of 3.5 pF minimizes signal distortion and improves high-frequency performance in RF applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4392 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4392 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-129-2585, 5961011292585

NIIN

011292585

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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