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MPF4393RLRPG

Onsemi

MPF4393RLRPG by Onsemi

MPF4393RLRPG by Onsemi is a N-CHANNEL FET for SWITCHING applications. With a 30V DS Breakdown Voltage and 100 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This THROUGH-HOLE transistor has a max power dissipation of 0.625W and can withstand temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,783 parts In-Stock

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Vyrian

USA . 366 parts In-Stock

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366

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Ampacity Inc.

Singapore . 1,019 parts In-Stock

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$13.050

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$13.050

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Component Stockers USA

USA . 352 parts In-Stock

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$99.990

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Perfect Parts

USA . 15,466 parts In-Stock

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Problanco Electronics

Mexico . 5,739 parts In-Stock

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Kulean Microsystems

USA . 3,162 parts In-Stock

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SupplyDigital Components

Austria . 2,976 parts In-Stock

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Corphita

USA . 2,104 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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UHIMA Technologies

Türkiye . 51 parts In-Stock

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TANS Electronics

Latvia . 1 parts In-Stock

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Overview

Unlock the power of innovation with the MPF4393RLRPG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for a wide range of applications, from switching to depletion mode operations. With a maximum power dissipation of 0.625 W and a minimum DS breakdown voltage of 30 V, this N-channel transistor offers reliability and performance like no other. Trust Onsemi to provide cutting-edge technology and superior products that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making this product suitable for high-speed switching applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into different electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle relatively high voltages, increasing its versatility in different circuit designs.

Maximum Power Dissipation (Abs): 0.625 W

Can safely dissipate up to 0.625 W of power, making it suitable for applications where power dissipation is a concern.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments without compromising performance.

Maximum Drain-Source On Resistance: 100 ohm

The low on-resistance of 100 ohms minimizes power loss and heat generation, making this transistor energy-efficient.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance helps reduce the chances of oscillations and interference, ensuring stable operation in various circuit configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4393RLRPG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4393RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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