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MPF4393RLRA

Onsemi

MPF4393RLRA by Onsemi

MPF4393RLRA by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring DEPLETION MODE operation, it has a Max RDS(on) of 100Ω and Crss of 3.5pF. This THROUGH-HOLE transistor in CYLINDRICAL package suits various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,884 parts In-Stock

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Digiode

USA . 146 parts In-Stock

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146

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TANS Electronics

Latvia . 5,915 parts In-Stock

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Kulean Microsystems

USA . 4,795 parts In-Stock

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SupplyDigital Components

Austria . 3,373 parts In-Stock

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Problanco Electronics

Mexico . 1,583 parts In-Stock

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Corphita

USA . 763 parts In-Stock

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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Overview

Unlock the power of innovation with the MPF4393RLRA Small Signal Field Effect Transistor by Onsemi. Manufactured to the highest quality standards, this N-CHANNEL transistor offers unmatched reliability and performance in switching applications. Its sleek design and advanced technology make it a versatile solution for various electronic projects. Experience seamless operation and superior efficiency with the MPF4393RLRA, providing value and benefits that exceed expectations. Elevate your creations with this cutting-edge component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have faster switching speeds and lower on-resistance compared to P-channel FETs, making them ideal for high-performance applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without the risk of damage, making it suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast switching speeds and low on-resistance, making it an efficient choice for circuit designs requiring rapid switching.

Maximum Drain-Source On Resistance: 100 ohm

The low on-resistance of 100 ohms ensures minimal power loss and efficient performance when the transistor is conducting, making it an ideal choice for high-speed switching applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers good amplification characteristics and low noise performance, making it suitable for applications where signal integrity is crucial.

Maximum Feedback Capacitance (Crss): 3.5 pF

The low feedback capacitance of 3.5 pF ensures minimal capacitive loading on the input signal, making this FET ideal for high-frequency applications where signal distortion needs to be minimized.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4393RLRA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4393RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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