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MPF4392RL1

Onsemi

MPF4392RL1 by Onsemi

MPF4392RL1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a DEPLETION MODE, it has a low 60 ohm Drain-Source On Resistance and 3.5 pF Feedback Capacitance. This THROUGH-HOLE transistor in CYLINDRICAL package is made of SILICON with TIN LEAD finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,190 parts In-Stock

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Digiode

USA . 702 parts In-Stock

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Problanco Electronics

Mexico . 5,538 parts In-Stock

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SupplyDigital Components

Austria . 2,398 parts In-Stock

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Corphita

USA . 1,939 parts In-Stock

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Kulean Microsystems

USA . 894 parts In-Stock

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TANS Electronics

Latvia . 461 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MPF4392RL1 by Onsemi. As a leader in small signal field effect transistors, Onsemi delivers unmatched quality and reliability. Perfect for switching applications, this N-channel transistor offers exceptional performance with a minimum DS breakdown voltage of 30V and maximum drain-source on resistance of 60 ohms. Whether you're a hobbyist or a professional, this transistor's versatility and efficiency make it an essential component for your projects. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and less prone to damage during installation.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have higher electron mobility, resulting in faster switching speeds and lower ON resistance.

Configuration: SINGLE

Single configuration transistors are easier to control and require simpler circuit designs compared to dual or multiple configuration transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times when turning on and off.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages, making it suitable for a variety of applications.

Package Shape: ROUND

The round shape of the package allows for easy mounting and ensures a secure fit within the circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong connection to the circuit board, reducing the risk of intermittent connections or failures.

Operating Mode: DEPLETION MODE

Depletion mode transistors are normally ON and require a negative gate voltage to turn off, which can be useful in certain circuit configurations.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and allows for easy integration into existing circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-efficient, making it suitable for applications where size is a constraint.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, resulting in high gain and minimal signal distortion.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and performance, making it an ideal choice for transistors.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability, ensuring a strong and reliable connection between the transistor and the circuit board.

Maximum Drain-Source On Resistance: 60 ohm

With a low ON resistance, this transistor experiences minimal power loss and heat generation, resulting in higher efficiency.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and mounting, making installation quick and convenient.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance ensures minimal signal distortion and high stability, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4392RL1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4392RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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