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MPF4393RLRM

Onsemi

MPF4393RLRM by Onsemi

MPF4393RLRM by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm RDS(on), and 3.5pF Crss. With a PLASTIC/EPOXY body and DEPLETION MODE operation, it is ideal for various electronic circuits requiring efficient switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,649 parts In-Stock

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1,649

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Vyrian

USA . 676 parts In-Stock

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676

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Kulean Microsystems

USA . 7,804 parts In-Stock

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7,804

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SupplyDigital Components

Austria . 7,707 parts In-Stock

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7,707

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Problanco Electronics

Mexico . 5,709 parts In-Stock

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5,709

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TANS Electronics

Latvia . 3,772 parts In-Stock

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3,772

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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980

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Corphita

USA . 909 parts In-Stock

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909

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Corohmni

South Africa . 259 parts In-Stock

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Overview

Unleash the power of innovation with the MPF4393RLRM by Onsemi. As a leading manufacturer in the industry of Small Signal Field Effect Transistors (FET), Onsemi delivers top-quality products that are designed to excel in a variety of applications, including switching. The MPF4393RLRM offers unparalleled value and benefits to customers, providing reliable performance and efficiency. Elevate your projects to new heights with this N-CHANNEL transistor that boasts a minimum DS breakdown voltage of 30V and a maximum drain-source on resistance of 100 ohm. Choose Onsemi for superior quality and unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability, making the transistor resistant to damage and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and conductivity compared to P-channel transistors, making them suitable for high-performance applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently turn on and off electronic circuits.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30 V, this transistor can handle higher voltages without malfunctioning, ensuring reliable performance.

Field Effect Transistor Technology: JUNCTION

Junction FETs offer high input impedance and low output impedance, making them suitable for low-power applications with high frequency.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4393RLRM attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4393RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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