Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
ZVN3320FTA by Diodes Inc. is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 1A IDM and 0.06A ID, with 25 ohm RDS(on). Its GULL WING terminals and PLASTIC/EPOXY package make it suitable for surface mount designs requiring fast switching speeds.
Median Price
$0.261
Lifecycle Status
Suppliers In-Stock
32
In-Stock Inventory
1k+
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Arrow
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Element14
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S.R.D Solutions
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QUARKTWIN TECHNOLOGY LTD
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Authorized Procurement Solutions
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Netroflash
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SIE Connect GmbH (Excess)
This material provides durability and protection for the internal components, making this FET suitable for various applications.
With N-channel type, this FET allows for easy integration into existing circuit designs and offers efficient performance.
The single configuration simplifies the circuit layout and reduces the overall complexity of the system.
Being surface mountable, this FET is easy to install and saves valuable space on the PCB.
The high breakdown voltage ensures reliable operation and protects the FET from voltage fluctuations.
The rectangular shape of the package allows for easy mounting and secure placement on the circuit board.
The gull wing terminals provide a sturdy connection and simplify the soldering process during assembly.
This mode offers precise control over the FET's operation, allowing for efficient power management and improved performance.
With a high pulsed drain current rating, this FET can handle short pulses of current without damage.
The low maximum drain current ensures safe operation and prevents overheating of the FET.
The three terminals offer flexibility in circuit design and allow for various connection options.
The low power dissipation rating ensures minimal energy loss and enhances the efficiency of the FET.
The small outline package style saves space on the PCB and is ideal for compact electronic devices.
This advanced technology provides high performance and reliability in various applications.
The maximum power dissipation in ambient conditions ensures the FET can operate efficiently without overheating.
The high operating temperature range allows the FET to function reliably in a variety of environments.
Silicon material offers consistent performance and longevity, making this FET a durable choice for long-term use.
The fast turn-on time ensures quick response and efficient operation of the FET.
The low minimum operating temperature range makes this FET suitable for use in harsh environmental conditions.
The fast turn-off time enhances the responsiveness of the FET and improves overall performance.
The matte tin finish provides a reliable connection and ensures long-term durability in various applications.
The low maximum drain current rating prevents excessive power consumption and ensures safe operation.
The low on-resistance minimizes power loss and enhances the efficiency of the FET.
The dual terminal position offers flexibility in mounting and connection options for the FET.
The short time at peak reflow temperature ensures the FET's reliability during assembly processes.
The high peak reflow temperature tolerance allows for robust soldering and assembly of the FET.
The low feedback capacitance reduces signal distortion and improves the overall performance of the FET in high-frequency applications.
Small Signal Field Effect Transistors (FET) ZVN3320FTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
ZVN3320FTA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.95
SB
8541.21.00.80
PCN Assembly/Origin - Mult Dev A/T Site 31/Mar/2021
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
1N4148
Continental Device India
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Microchip Technology
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Jiangsu Changjiang Electronics Technology
1N4148WS
BAV99
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
FDC602P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 5.5 A;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
MMBF170LT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
ZXM61P03FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; No. of Terminals: 3; JESD-609 Code: e3;
BSS123LT1
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JEDEC-95 Code: TO-236AB; Terminal Finish: Tin/Lead (Sn/Pb);
2N7002PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
BS170
Vishay Intertechnology
Vishay Intertechnology's BS170 is a N-channel FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.83W.
BSS138TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .2 A;
IRF9310TRPBF-1
Infineon Technologies
Infineon's IRF9310TRPBF-1 is a P-channel FET with 30V breakdown voltage, 20A max drain current, and 0.0046 ohm on-resistance. Ideal for enhancement mode operation in applications requiring high power efficiency and compact design. Features gull wing terminals in a small outline package for surface mount assembly.
FDC6321C
FDC6321C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements in plastic/epoxy package. It operates in enhancement mode for switching applications, with max power dissipation of 0.9W and max operating temp of 150°C. Featuring dual terminals and low on-resistance at 0.45 ohm, it's ideal for compact electronic designs requiring efficient power management.
FDG8850NZ
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Qualification: Not Qualified;
BSS123L6327
Infineon's BSS123L6327 is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 6ohm On Resistance. With Matte Tin finish, it can withstand -55 to 150 °C temperatures.
MMBFJ201
MMBFJ201 by Onsemi is a N-CHANNEL FET with PLASTIC/EPOXY body, suitable for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and can handle up to 0.35W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and peak reflow temperature of 260°C.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
2N7002-TP
Micro Commercial Components
2N7002-TP by Micro Commercial Components is a N-channel FET with 60V breakdown voltage and 7.5 ohm on-resistance, ideal for switching applications. Operating in enhancement mode, it has a max drain current of 0.34A and peak reflow temperature of 260°C. This small outline transistor features a gull wing terminal form and metal-oxide semiconductor technology.
IRLML2803TRPBF-1
IRLML2803TRPBF-1 by Infineon is a N-channel FET with 30V DS breakdown voltage and 1.2A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 0.25 ohm RDS(on). Ideal for small outline packages requiring high power dissipation up to 150°C.
NDS332P
NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.
2N7000
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JEDEC-95 Code: TO-226AA; JESD-30 Code: O-PBCY-T3;
BSS123
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
ZVN3310FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
ZVN3310FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 0.1A max drain current, 10 ohm max on resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it's suitable for various surface mount designs.
ZVN3320FTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
ZVN3306FTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .15 A; Maximum Drain-Source On Resistance: 5 ohm;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;
ZVN3306A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Peak Reflow Temperature (C): 260; Package Style (Meter): CYLINDRICAL;
ZVN3306A by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.27A ID, and 5 ohm RDS(ON). It's used in small signal applications due to its ENHANCEMENT MODE operation and 150°C max temp.
ZVN3306ASTZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: 5 ohm; Maximum Time At Peak Reflow Temperature (s): 10; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ZVN3306ASTZ by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.27A ID, and 5 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape with WIRE terminals in IN-LINE style.
ZVN3306F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 60 V; Maximum Feedback Capacitance (Crss): 8 pF;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .15 A; Minimum DS Breakdown Voltage: 60 V;
ZVN3306ASTOA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: WIRE; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): 10; JESD-30 Code: R-PSIP-W3; No. of Terminals: 3;
ZVN3306ASTOB
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; JESD-30 Code: R-PSIP-W3;
ZVN3310ASTZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 10;
ZVN3310ASTZ by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.2A ID, and 10 ohm RDS(on). Ideal for switching applications due to its ENHANCEMENT MODE operation. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.
ZVN3310FTC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ZVN3320F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
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