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ZVN3310ASTZ

Diodes Incorporated

ZVN3310ASTZ by Diodes Incorporated

ZVN3310ASTZ by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.2A ID, and 10 ohm RDS(on). Ideal for switching applications due to its ENHANCEMENT MODE operation. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.

Median Price

$1.060

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,833 parts In-Stock

1+ parts

$0.604

100+ parts

$0.336

1k+ parts

$0.240

10k+ parts

-

1,833

$0.604

$0.336

$0.240

-

Mouser Electronics

USA . 3,801 parts In-Stock

1+ parts

$1.060

100+ parts

$0.468

1k+ parts

$0.346

10k+ parts

$0.296

3,801

$1.060

$0.468

$0.346

$0.296

Newark

USA . 1,833 parts In-Stock

1+ parts

$1.090

100+ parts

$0.482

1k+ parts

$0.356

10k+ parts

-

1,833

$1.090

$0.482

$0.356

-

Element14

Singapore . 1,833 parts In-Stock

1+ parts

$1.170

100+ parts

$0.644

1k+ parts

$0.531

10k+ parts

-

1,833

$1.170

$0.644

$0.531

-

DigiKey

USA . 2,014 parts In-Stock

1+ parts

$1.410

100+ parts

$0.586

1k+ parts

$0.415

10k+ parts

-

2,014

$1.410

$0.586

$0.415

-

Verical

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.287

66,000

-

-

-

$0.287

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.260

2,000

-

-

-

$0.260

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.345

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.345

-

-

-

Chip Stock

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 15,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,700

-

-

-

-

Vyrian

USA . 11,208 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,208

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,984 parts In-Stock

1+ parts

$0.345

100+ parts

-

1k+ parts

-

10k+ parts

$0.334

3,984

$0.345

-

-

$0.334

Continental Prestige Electronics

USA . 2,374 parts In-Stock

1+ parts

$0.345

100+ parts

-

1k+ parts

-

10k+ parts

$0.338

2,374

$0.345

-

-

$0.338

Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$0.345

100+ parts

$0.328

1k+ parts

$0.311

10k+ parts

$0.307

50

$0.345

$0.328

$0.311

$0.307

Benley Electronics

USA . 31 parts In-Stock

1+ parts

$0.400

100+ parts

-

1k+ parts

-

10k+ parts

-

31

$0.400

-

-

-

Corohmni

South Africa . 274 parts In-Stock

1+ parts

$1.472

100+ parts

-

1k+ parts

-

10k+ parts

-

274

$1.472

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 25,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,085

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Perfect Parts

USA . 4,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,480

-

-

-

-

Kepictronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Overview

Unlock the power of innovation with the ZVN3310ASTZ by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With a single configuration and N-channel polarity, this product offers a breakthrough in performance and reliability. Experience enhanced efficiency and superior functionality with the ZVN3310ASTZ, providing customers with unmatched value and benefits. Upgrade your technology with Diodes Incorporated today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the internal components, making it a reliable choice.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better conductivity and efficiency, making them suitable for high-performance applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, offering ease of use for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient performance in controlling current flow.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation, making it convenient for assembly.

Terminal Form: WIRE

Wire terminals provide a secure connection and flexibility in installation, ensuring stable performance in different environments.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation offers precise control over the transistor's conductivity, ideal for applications requiring fine-tuned performance.

No. of Terminals: 3

With 3 terminals, this transistor offers versatility in circuit design and compatibility with different configurations.

Package Style (Meter): IN-LINE

The in-line package style allows for compact and organized placement in circuits, optimizing space and layout efficiency.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology ensures high reliability, low power consumption, and improved performance characteristics.

Transistor Element Material: SILICON

Silicon transistor elements offer stability, efficiency, and compatibility with various circuit designs, making them a popular choice in electronics.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and solderability, ensuring a reliable connection and long-term performance.

Maximum Drain Current (ID): 0.2 A

With a maximum drain current of 0.2A, this transistor can handle moderate current loads, suitable for many electronic applications.

Maximum Drain-Source On Resistance: 10 ohm

The low drain-source on resistance of 10 ohms ensures minimal power loss and efficient performance in switching operations.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it user-friendly and easy to integrate into circuits.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is robust and can withstand high-temperature processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering and component integrity during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN3310ASTZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN3310ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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