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NTVS3141PT2G

Onsemi

NTVS3141PT2G by Onsemi

NTVS3141PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.7A and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR GRID ARRAY package has 6 terminals with BALL form, suitable for surface mount designs.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 5,155 parts In-Stock

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Digiode

USA . 1,599 parts In-Stock

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AZTECH Wire

Italy . 848 parts In-Stock

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$21.730

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TANS Electronics

Latvia . 7,089 parts In-Stock

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Kulean Microsystems

USA . 3,315 parts In-Stock

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Corphita

USA . 1,602 parts In-Stock

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Problanco Electronics

Mexico . 939 parts In-Stock

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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SupplyDigital Components

Austria . 319 parts In-Stock

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Corohmni

South Africa . 227 parts In-Stock

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Overview

Enhance your electronic devices with the NTVS3141PT2G by Onsemi, a high-quality P-Channel Field Effect Transistor perfect for switching applications. With its single configuration and built-in diode, this transistor offers efficient performance and reliability. Whether you're designing consumer electronics or industrial equipment, this transistor's maximum drain current of 3.7A and low on-resistance of 0.2 ohm will provide the power and efficiency you need. Trust Onsemi's expertise in semiconductor technology to bring value and innovation to your projects. Upgrade your designs with the NTVS3141PT2G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and can save space on the PCB.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low power dissipation.

Surface Mount: YES

Easy to integrate into surface mount technology, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without damage.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount on the PCB and provides a stable connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conduction.

Maximum Drain Current (Abs) (ID): 3.7 A

Capable of handling high drain currents, making it suitable for power applications.

No. of Terminals: 6

The 6 terminals offer flexibility in circuit connections and ensure a secure connection.

Maximum Power Dissipation (Abs): 1.5 W

Can dissipate up to 1.5W of power, making it suitable for applications that require high power handling.

Package Style (Meter): GRID ARRAY

Grid array package style allows for easy mounting and soldering on the PCB.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in the transistor.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for various industrial applications.

Transistor Element Material: SILICON

Silicon material offers high conductivity and reliability in the transistor's performance.

Terminal Finish: MATTE TIN

Matte tin finish provides a stable and reliable connection for the terminals.

Maximum Drain-Source On Resistance: 0.2 ohm

Low drain-source on resistance of 0.2 ohm ensures efficient conduction in the transistor.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on the PCB and ensures a secure connection.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTVS3141PT2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

2.9 A

Maximum Drain-Source On Resistance:

.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

BALL

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTVS3141PT2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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