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SFT1342-TL-W

Onsemi

SFT1342-TL-W by Onsemi

The Onsemi SFT1342-TL-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-power handling in compact designs.

Median Price

$0.474

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$0.448

100+ parts

-

1k+ parts

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10k+ parts

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1

$0.448

-

-

-

Rochester

USA . 13,596 parts In-Stock

1+ parts

-

100+ parts

$0.501

1k+ parts

$0.416

10k+ parts

$0.371

13,596

-

$0.501

$0.416

$0.371

Flip Electronics (Authorized)

USA . 1,955 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,955

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,400 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

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1,400

$0.390

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.500

100+ parts

-

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1,000

$0.500

-

-

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Vyrian

USA . 3,132 parts In-Stock

1+ parts

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3,132

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Flip Electronics

USA . 1,955 parts In-Stock

1+ parts

-

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1,955

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-

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HZD GmbH

Germany . 300 parts In-Stock

1+ parts

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300

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,472 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

-

10k+ parts

-

5,472

$0.349

-

-

-

Semicontronic

India . 5,358 parts In-Stock

1+ parts

$0.349

100+ parts

$0.340

1k+ parts

$0.339

10k+ parts

-

5,358

$0.349

$0.340

$0.339

-

Corphita

USA . 2,275 parts In-Stock

1+ parts

$0.370

100+ parts

-

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2,275

$0.370

-

-

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Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.411

100+ parts

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78

$0.411

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$0.470

10k+ parts

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50

$0.490

-

$0.470

-

Argo Parts USA

USA . 3,509 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

$0.485

3,509

$0.500

-

-

$0.485

Continental Prestige Electronics

USA . 1,819 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

$0.490

1,819

$0.500

-

-

$0.490

Aztec Data Supply Inc.

USA . 3,573 parts In-Stock

1+ parts

$1.880

100+ parts

-

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3,573

$1.880

-

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AZTECH Wire

Italy . 850 parts In-Stock

1+ parts

$8.230

100+ parts

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850

$8.230

-

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-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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7,000

-

-

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TANS Electronics

Latvia . 5,623 parts In-Stock

1+ parts

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5,623

-

-

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Kulean Microsystems

USA . 2,847 parts In-Stock

1+ parts

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2,847

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SupplyDigital Components

Austria . 2,653 parts In-Stock

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2,653

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Problanco Electronics

Mexico . 1,051 parts In-Stock

1+ parts

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1,051

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UHIMA Technologies

Türkiye . 554 parts In-Stock

1+ parts

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554

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Advanced Electronics

New Zealand . 162 parts In-Stock

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162

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iodParts Technologies Inc.

India . 20 parts In-Stock

1+ parts

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20

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Overview

Experience unparalleled performance and reliability with the SFT1342-TL-W P-CHANNEL FET from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality in every product they produce. This small signal FET is perfect for a wide range of applications, offering customers exceptional value and benefits. Trust in the superior technology of this surface mount transistor to deliver outstanding results, making it the ideal choice for your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower resistance and higher electron mobility than N-channel transistors, providing better performance for certain applications.

Configuration: SINGLE

Single configuration simplifies design and reduces complexity in circuits, making it easier to integrate into projects.

Surface Mount: YES

Surface mount technology allows for smaller and lighter components, ideal for compact electronic devices.

Maximum Drain Current (ID): 12 A

High maximum drain current allows for handling larger currents, making it suitable for applications requiring high power output.

Maximum Power Dissipation: 15 W

High power dissipation capability ensures better thermal management and reliability under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good switching performance and low leakage current, improving efficiency and reducing power consumption.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for reliable performance in harsh environments or extended operation periods.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish offers good solderability and RoHS compliance, ensuring easy assembly and environmental friendliness.

Maximum Time At Peak Reflow Temperature (s): 30

Relatively short reflow time minimizes heat exposure and potential damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability supports lead-free soldering and withstands higher soldering temperatures for robust connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1342-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SFT1342-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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