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SFT1407

Onsemi

SFT1407 by Onsemi

The Onsemi SFT1407 is a N-CHANNEL FET with 45V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a SINGLE configuration with BUILT-IN DIODE, it has a max ID of 14A and 0.041 ohm RDS(on). The PLASTIC/EPOXY package in RECTANGULAR shape offers THROUGH-HOLE terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,824 parts In-Stock

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Vyrian

USA . 428 parts In-Stock

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428

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Problanco Electronics

Mexico . 6,668 parts In-Stock

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6,668

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SupplyDigital Components

Austria . 4,478 parts In-Stock

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TANS Electronics

Latvia . 1,268 parts In-Stock

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Kulean Microsystems

USA . 1,229 parts In-Stock

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UHIMA Technologies

Türkiye . 731 parts In-Stock

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731

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Corphita

USA . 349 parts In-Stock

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349

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Corohmni

South Africa . 230 parts In-Stock

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Overview

Discover the power of the SFT1407 by Onsemi, a top-quality Small Signal Field Effect Transistor that offers unmatched performance and reliability. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for switching applications. Its 45V minimum breakdown voltage and low on-resistance ensure optimal efficiency. Trust in Onsemi's expertise in semiconductor technology to provide you with a product that exceeds expectations. Experience seamless operation and high functionality with the SFT1407 - the solution you've been searching for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, ensuring its longevity and reliability in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better conductivity and switching characteristics, making this transistor suitable for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient control and protection of the transistor, enhancing its overall performance and versatility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it ideal for use in various electronic devices.

Minimum DS Breakdown Voltage: 45 V

With a minimum breakdown voltage of 45V, this transistor can handle high voltage applications with ease, providing reliable performance under challenging conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit boards, making it convenient to use in different electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables secure connections and ease of soldering, ensuring a reliable electrical connection in electronic circuits.

Operating Mode: ENHANCEMENT MODE

Being an enhancement mode transistor means it can be easily turned on and off, providing improved control and efficiency in switching operations.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and configurations, allowing for easy integration into electronic systems while maintaining functionality.

Package Style (Meter): IN-LINE

The in-line package style offers space-saving benefits and facilitates neat circuit layout designs, making it suitable for applications with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and reliability, ensuring optimal performance and durability in various electronic applications.

Transistor Element Material: SILICON

Silicon-based transistors offer superior performance and stability, making this transistor a reliable choice for demanding electronic applications.

Maximum Drain Current (ID): 14 A

With a high maximum drain current of 14A, this transistor can handle high power loads, making it suitable for power electronics and other high-current applications.

Maximum Drain-Source On Resistance: 0.041 ohm

The low drain-source on resistance of 0.041 ohm ensures minimal power loss and efficient operation, making this transistor ideal for low-power dissipation applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures compatibility with standard electronic components, enhancing the transistor's versatility in various applications.

Case Connection: DRAIN

The drain case connection allows for easy heat dissipation and thermal management, ensuring the transistor operates within safe temperature limits for reliable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1407 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.041 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SFT1407 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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