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SFT1452-TL-W

Onsemi

SFT1452-TL-W by Onsemi

The Onsemi SFT1452-TL-W is a N-CHANNEL FET with 3A max drain current and 26W max power dissipation. Ideal for surface mount applications, it operates at up to 150°C making it suitable for high temperature environments.

Median Price

$0.396

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 667 parts In-Stock

1+ parts

$2.690

100+ parts

$0.896

1k+ parts

$0.701

10k+ parts

-

667

$2.690

$0.896

$0.701

-

Flip Electronics (Authorized)

USA . 1,400 parts In-Stock

1+ parts

-

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-

1k+ parts

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1,400

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-

-

-

Rochester

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

$0.352

1k+ parts

$0.292

10k+ parts

$0.261

1,200

-

$0.352

$0.292

$0.261

DigiKey

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

1,200

-

-

-

$0.300

Verical

USA . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.440

10k+ parts

-

900

-

-

$0.440

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,732 parts In-Stock

1+ parts

$0.275

100+ parts

-

1k+ parts

-

10k+ parts

-

1,732

$0.275

-

-

-

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

-

10k+ parts

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700

$0.436

-

-

-

Flip Electronics

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,400

-

-

-

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Vyrian

USA . 656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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656

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 733 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

-

733

$0.246

-

-

-

Semicontronic

India . 624 parts In-Stock

1+ parts

$0.246

100+ parts

$0.240

1k+ parts

$0.239

10k+ parts

-

624

$0.246

$0.240

$0.239

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Corphita

USA . 617 parts In-Stock

1+ parts

$0.260

100+ parts

-

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-

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617

$0.260

-

-

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Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.289

100+ parts

-

1k+ parts

-

10k+ parts

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196

$0.289

-

-

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Aztec Data Supply Inc.

USA . 257 parts In-Stock

1+ parts

$0.360

100+ parts

-

1k+ parts

-

10k+ parts

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257

$0.360

-

-

-

Continental Prestige Electronics

USA . 2,588 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

-

10k+ parts

$0.427

2,588

$0.436

-

-

$0.427

Argo Parts USA

USA . 1,808 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

-

10k+ parts

$0.423

1,808

$0.436

-

-

$0.423

Perfect Parts

USA . 6,162 parts In-Stock

1+ parts

-

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6,162

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TANS Electronics

Latvia . 4,800 parts In-Stock

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4,800

-

-

-

-

Problanco Electronics

Mexico . 4,065 parts In-Stock

1+ parts

-

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4,065

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-

-

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Kulean Microsystems

USA . 2,736 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,736

-

-

-

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SupplyDigital Components

Austria . 826 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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826

-

-

-

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RC Electronics

USA . 700 parts In-Stock

1+ parts

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100+ parts

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700

-

-

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GreenTree Electronics

Israel . 667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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667

-

-

-

-

UHIMA Technologies

Türkiye . 641 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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641

-

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.427

1k+ parts

$0.414

10k+ parts

$0.405

100

-

$0.427

$0.414

$0.405

Overview

Discover the innovative SFT1452-TL-W by Onsemi, a top-quality Small Signal Field Effect Transistor that guarantees reliability and efficiency in various applications. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL FET offers unparalleled performance with a maximum drain current of 3A and a power dissipation of 26W. Ideal for surface mount configurations, this transistor utilizes METAL-OXIDE SEMICONDUCTOR technology for optimal functionality. Experience the value and benefits of this product, from its superior temperature tolerance to its tin bismuth terminal finish, making it the perfect choice for your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower ON-state resistance and better current handling capabilities compared to P-CHANNEL FETs.

Configuration: SINGLE

Single configuration FETs are easy to design with and handle in circuits, making them a versatile choice for various applications.

Surface Mount: YES

Surface mount FETs are easy to use in PCB designs, saving space and making assembly processes more efficient.

Maximum Drain Current (Abs) (ID): 3 A

High maximum drain current allows for handling higher power loads and provides flexibility in circuit design.

Maximum Power Dissipation (Abs): 26 W

High power dissipation rating ensures that the FET can handle heat generated during operation without risk of overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability in FET designs.

Maximum Operating Temperature: 150 °C

Ability to operate at high temperatures makes this FET suitable for use in demanding environments and applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and resistance to environmental factors, ensuring reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

With a short time at peak reflow temperature, this FET is easier to solder and less prone to thermal stress during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures proper soldering and reliability in PCB assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1452-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SFT1452-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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