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SFT1423-E

Onsemi

SFT1423-E by Onsemi

Onsemi's SFT1423-E is a N-CHANNEL FET with 2A max drain current and 20W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as amplifiers and power management systems.

Median Price

$0.466

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

1,500

-

$0.502

$0.417

$0.371

DigiKey

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

$0.430

1,500

-

-

$0.430

$0.430

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,850 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

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1,850

$0.391

-

-

-

Vyrian

USA . 299 parts In-Stock

1+ parts

$0.412

100+ parts

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299

$0.412

-

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DigiKey Marketplace

USA . 1,500 parts In-Stock

1+ parts

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1,500

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 536 parts In-Stock

1+ parts

$0.371

100+ parts

-

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-

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536

$0.371

-

-

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Corohmni

South Africa . 244 parts In-Stock

1+ parts

$0.412

100+ parts

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244

$0.412

-

-

-

Kulean Microsystems

USA . 7,979 parts In-Stock

1+ parts

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7,979

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SupplyDigital Components

Austria . 3,946 parts In-Stock

1+ parts

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3,946

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TANS Electronics

Latvia . 3,144 parts In-Stock

1+ parts

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3,144

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Problanco Electronics

Mexico . 2,825 parts In-Stock

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2,825

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Continental Prestige Electronics

USA . 1,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.378

10k+ parts

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1,500

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-

$0.378

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Kepictronics

USA . 1,500 parts In-Stock

1+ parts

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100+ parts

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1,500

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UHIMA Technologies

Türkiye . 932 parts In-Stock

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932

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Overview

Enhance your electronic projects with the SFT1423-E small signal field effect transistor by Onsemi. Known for their superior quality and reliable performance, Onsemi products are trusted by professionals worldwide. Ideal for a variety of applications, this N-channel FET offers a maximum drain current of 2A and a maximum power dissipation of 20W, making it perfect for a wide range of electronic devices. Experience the value and benefits of using Onsemi's SFT1423-E in your next project and take your designs to the next level.

Feature Benefit Bullets

Polarity/Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high electron mobility and faster switching speeds compared to P-CHANNEL FETs, making this product suitable for high-speed applications.

Maximum Drain Current (ID): 2 A

With a maximum drain current of 2 A, this FET can handle higher current loads, making it suitable for applications that require higher power levels.

Maximum Power Dissipation: 20 W

The high maximum power dissipation of 20 W allows this FET to dissipate heat efficiently, ensuring better reliability and performance in high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer high input impedance and low output impedance, making them ideal for applications where low power consumption and high efficiency are required.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand higher temperatures, making it suitable for applications where heat dissipation is a concern.

Terminal Finish: TIN BISMUTH

The Tin Bismuth terminal finish offers good solderability and thermal characteristics, ensuring reliable connections and efficient heat dissipation in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1423-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

SFT1423-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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