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SFT1342-E

Onsemi

SFT1342-E by Onsemi

The Onsemi SFT1342-E is a P-CHANNEL FET with 60V DS breakdown voltage and 12A ID. Ideal for switching applications, it features a single configuration with built-in diode and 0.096 ohm RDS(on). The transistor operates in enhancement mode with SILICON element material and DRAIN case connection.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,835 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

9,835

-

$0.343

$0.285

$0.254

DigiKey

USA . 9,835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

9,835

-

-

$0.430

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 503 parts In-Stock

1+ parts

$0.225

100+ parts

-

1k+ parts

-

10k+ parts

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503

$0.225

-

-

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Digiode

USA . 2,074 parts In-Stock

1+ parts

$0.268

100+ parts

-

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-

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2,074

$0.268

-

-

-

DigiKey Marketplace

USA . 20,239 parts In-Stock

1+ parts

-

100+ parts

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20,239

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Distributors (Availability)

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Corohmni

South Africa . 471 parts In-Stock

1+ parts

$0.225

100+ parts

-

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-

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471

$0.225

-

-

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Corphita

USA . 1,294 parts In-Stock

1+ parts

$0.254

100+ parts

-

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1,294

$0.254

-

-

-

Component Stockers USA

USA . 34,718 parts In-Stock

1+ parts

$0.290

100+ parts

$0.270

1k+ parts

$0.240

10k+ parts

$0.240

34,718

$0.290

$0.270

$0.240

$0.240

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

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56,986

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-

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Continental Prestige Electronics

USA . 20,239 parts In-Stock

1+ parts

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100+ parts

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$0.225

10k+ parts

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20,239

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-

$0.225

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QUARKTWIN TECHNOLOGY LTD

USA . 15,289 parts In-Stock

1+ parts

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15,289

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TANS Electronics

Latvia . 8,331 parts In-Stock

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8,331

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Kulean Microsystems

USA . 6,243 parts In-Stock

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6,243

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SupplyDigital Components

Austria . 5,697 parts In-Stock

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5,697

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 1,495 parts In-Stock

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1,495

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Perfect Parts

USA . 1,269 parts In-Stock

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1,269

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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329

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Overview

Transform your electronic projects with the SFT1342-E by Onsemi, a high-quality P-CHANNEL small signal field effect transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this FET is perfect for switching applications, with a minimum DS breakdown voltage of 60 V and a maximum drain current of 12 A. With its built-in diode and low on-resistance, this transistor provides excellent value and efficiency for your projects. Upgrade your designs today with the SFT1342-E and experience the advantages of Onsemi's top-notch technology in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term usage.

Polarity or Channel Type: P-CHANNEL

Suitable for switching applications where P-channel FETs are preferred.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with built-in diode for specific circuit requirements.

Transistor Application: SWITCHING

Highly efficient for switching operations and applications.

Minimum DS Breakdown Voltage: 60 V

Safe operating voltage level for various electronic systems.

Package Shape: RECTANGULAR

Compact and space-saving package design.

Terminal Form: THROUGH-HOLE

Easy to solder and install in circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhanced control over the transistor's operation.

No. of Terminals: 3

Simple interface with limited connections.

Package Style (Meter): IN-LINE

Easy to handle and integrate with other components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and efficiency for the product.

Transistor Element Material: SILICON

Durable and widely used semiconductor material.

Maximum Drain Current (ID): 12 A

Capable of handling high current loads with efficiency.

Maximum Drain-Source On Resistance: 0.096 ohm

Low on-resistance for minimal power loss and heat generation.

Terminal Position: SINGLE

Simplified terminal layout for easy connection.

Case Connection: DRAIN

Suitable connection for the specific transistor configuration.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1342-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.096 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SFT1342-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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