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SFT1342-W

Onsemi

SFT1342-W by Onsemi

The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.

Median Price

$0.603

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,000 parts In-Stock

1+ parts

$0.611

100+ parts

$0.516

1k+ parts

$0.485

10k+ parts

-

1,000

$0.611

$0.516

$0.485

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.485

10k+ parts

-

1,000

-

$0.516

$0.485

-

Rochester

USA . 570 parts In-Stock

1+ parts

-

100+ parts

$0.603

1k+ parts

$0.501

10k+ parts

$0.447

570

-

$0.603

$0.501

$0.447

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 764 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

764

$0.470

-

-

-

Vyrian

USA . 8,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,451

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 757 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

-

10k+ parts

-

757

$0.446

-

-

-

Corohmni

South Africa . 359 parts In-Stock

1+ parts

$0.495

100+ parts

-

1k+ parts

-

10k+ parts

-

359

$0.495

-

-

-

Component Stockers USA

USA . 3,541 parts In-Stock

1+ parts

$0.500

100+ parts

$0.470

1k+ parts

$0.430

10k+ parts

-

3,541

$0.500

$0.470

$0.430

-

AZTECH Wire

Italy . 670 parts In-Stock

1+ parts

$10.330

100+ parts

-

1k+ parts

-

10k+ parts

-

670

$10.330

-

-

-

Kulean Microsystems

USA . 6,812 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,812

-

-

-

-

SupplyDigital Components

Austria . 6,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,520

-

-

-

-

Kepictronics

USA . 2,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,133

-

-

-

-

Perfect Parts

USA . 1,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,680

-

-

-

-

Problanco Electronics

Mexico . 1,083 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,083

-

-

-

-

TANS Electronics

Latvia . 449 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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449

-

-

-

-

UHIMA Technologies

Türkiye . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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30

-

-

-

-

Overview

Discover the cutting-edge SFT1342-W P-CHANNEL small signal field effect transistor by Onsemi, a powerhouse in semiconductor technology. This high-quality component offers versatile applications in electronics, providing unrivaled performance and reliability. With a maximum drain current of 12A and maximum power dissipation of 15W, this METAL-OXIDE SEMICONDUCTOR FET is designed to exceed expectations. Elevate your designs with the exceptional value and benefits that the SFT1342-W delivers, making it the ultimate choice for your next project.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower on-state resistance compared to N-channel FETs, making them suitable for applications where low power loss is desired.

Configuration: SINGLE

Single configuration FETs are simpler to use and control, which can make the product more user-friendly for those with limited experience in electronics.

Maximum Drain Current (Abs) (ID): 12 A

With a high maximum drain current, this FET can handle larger loads and currents, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation allows the FET to dissipate heat effectively, ensuring reliable operation even under high-power conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability, making this FET a durable and long-lasting choice for electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides good solderability and corrosion resistance, ensuring secure connections and reliable performance in various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1342-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

SFT1342-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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