Loading...

SFT1341-TL-W

Onsemi

SFT1341-TL-W by Onsemi

The Onsemi SFT1341-TL-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,411

-

-

-

-

Digiode

USA . 763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

763

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,201 parts In-Stock

1+ parts

$10.580

100+ parts

-

1k+ parts

-

10k+ parts

-

1,201

$10.580

-

-

-

Component Stockers USA

USA . 394 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

394

$99.990

-

-

-

Problanco Electronics

Mexico . 7,130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,130

-

-

-

-

SupplyDigital Components

Austria . 6,564 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,564

-

-

-

-

Kulean Microsystems

USA . 5,503 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,503

-

-

-

-

TANS Electronics

Latvia . 4,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,635

-

-

-

-

Corphita

USA . 1,583 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,583

-

-

-

-

Perfect Parts

USA . 1,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,568

-

-

-

-

Corohmni

South Africa . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

421

-

-

-

-

UHIMA Technologies

Türkiye . 88 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

88

-

-

-

-

Overview

Enhance the performance of your electronics with the SFT1341-TL-W by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are reliable and efficient. Ideal for various applications, this P-CHANNEL FET offers a maximum drain current of 10A and a power dissipation of 15W, ensuring optimal functionality. With a surface mount design and advanced metal-oxide semiconductor technology, the SFT1341-TL-W provides exceptional value and benefits to customers looking for high-performance components. Upgrade your devices today with Onsemi's innovative solutions.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low leakage current and higher mobility, making them efficient for certain applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and is suitable for most small signal applications.

Surface Mount: YES

Surface mount design allows for easy and compact integration into circuit boards, saving space and improving efficiency.

Maximum Drain Current (Abs) (ID): 10 A

High maximum drain current capability ensures the transistor can handle larger loads, making it versatile for various applications.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle higher power levels, increasing its efficiency and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as high input impedance, low noise, and low distortion.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding environments and maintain performance under heat stress.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides good solderability and reliability, ensuring stable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes thermal stress on the components during soldering, enhancing longevity and performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient and reliable soldering, ensuring strong connections in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1341-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SFT1341-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19