Loading...

SFT1345-TL-H

Onsemi

SFT1345-TL-H by Onsemi

The Onsemi SFT1345-TL-H is a P-CHANNEL FET with 11A max drain current and 35W max power dissipation. Ideal for surface mount applications, it features metal-oxide semiconductor technology and tin bismuth terminal finish.

Median Price

$0.471

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

310

-

-

-

-

Rochester

USA . 142 parts In-Stock

1+ parts

-

100+ parts

$0.471

1k+ parts

$0.391

10k+ parts

$0.348

142

-

$0.471

$0.391

$0.348

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,641 parts In-Stock

1+ parts

$0.384

100+ parts

-

1k+ parts

-

10k+ parts

-

1,641

$0.384

-

-

-

Bristol Electronics

USA . 13,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,700

-

-

-

-

Vyrian

USA . 8,657 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,657

-

-

-

-

Chip Stock

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

NexGen Digital

USA . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

950

-

-

-

-

Flip Electronics

USA . 310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

310

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,625 parts In-Stock

1+ parts

$0.364

100+ parts

-

1k+ parts

-

10k+ parts

-

1,625

$0.364

-

-

-

Corohmni

South Africa . 296 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

-

296

$0.404

-

-

-

Perfect Parts

USA . 10,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,006

-

-

-

-

TANS Electronics

Latvia . 5,856 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,856

-

-

-

-

SupplyDigital Components

Austria . 5,811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,811

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Problanco Electronics

Mexico . 3,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,479

-

-

-

-

S.R.D Solutions

India . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Kepictronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

700

-

-

-

-

UHIMA Technologies

Türkiye . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Kulean Microsystems

USA . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

84

-

-

-

-

Overview

Enhance your electronic projects with the SFT1345-TL-H P-CHANNEL FET by Onsemi. Manufactured to the highest quality standards, this small signal transistor offers reliable performance and versatility for a variety of applications. Whether you're working on amplifiers, power management systems, or voltage regulators, this surface mount transistor provides exceptional value, efficiency, and durability. Trust Onsemi's expertise in semiconductor technology to deliver a superior product that meets your needs. Elevate your designs with the SFT1345-TL-H and experience the benefits firsthand.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower on-state resistance and higher efficiency compared to N-channel FETs, making this product suitable for applications requiring high performance and energy efficiency.

Configuration: SINGLE

Single configuration FETs are easier to design and implement in circuits, making this product a straightforward choice for simpler applications.

Surface Mount: YES

Surface mount technology allows for compact and dense circuit designs, making this product ideal for space-constrained applications.

Maximum Drain Current (ID): 11 A

With a high maximum drain current, this FET can handle higher power loads, making it suitable for applications requiring large current carrying capacity.

Maximum Power Dissipation (Pd): 35 W

The high maximum power dissipation rating ensures that this FET can handle high power levels without overheating, making it reliable for demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low noise, and reliable operation, making this product a dependable choice for various electronic applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability, ensuring secure connections and longevity of the FET in the circuit.

Maximum Time At Peak Reflow Temperature: 30s

The short reflow time helps in preventing damage to the FET during soldering processes, ensuring its longevity and reliability in manufacturing.

Peak Reflow Temperature: 260C

The high peak reflow temperature tolerance allows for reliable soldering processes, ensuring a strong and durable connection of the FET in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1345-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

11 A

Maximum Drain Current (ID):

11 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SFT1345-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19