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SFT1305

Onsemi

SFT1305 by Onsemi

The Onsemi SFT1305 is a P-CHANNEL FET with 45V DS breakdown voltage and 10A ID. Ideal for switching applications, it features a single configuration with built-in diode and 0.147 ohm RDS(on). The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material ensure reliable performance in enhancement mode operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,407 parts In-Stock

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Digiode

USA . 1,138 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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SupplyDigital Components

Austria . 1,163 parts In-Stock

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TANS Electronics

Latvia . 997 parts In-Stock

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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Corphita

USA . 505 parts In-Stock

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Problanco Electronics

Mexico . 432 parts In-Stock

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Kulean Microsystems

USA . 192 parts In-Stock

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Corohmni

South Africa . 81 parts In-Stock

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Overview

Looking for a reliable and efficient solution for your switching applications? Look no further than the SFT1305 by Onsemi. With its high-quality construction and P-Channel configuration, this Small Signal Field Effect Transistor (FET) offers superior performance and reliability. Whether you're in need of a component for automotive, industrial, or consumer electronics, the SFT1305 provides the value, benefits, and advantages that customers like you are looking for. Trust Onsemi to deliver the quality and reliability you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have lower resistance and are more efficient for certain types of applications compared to N-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, making this transistor suitable for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 45 V

With a high breakdown voltage, this FET can handle higher voltages without breaking down, making it reliable in various circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on a circuit board.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering easier and provide a secure connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easy to control and offer fast switching capabilities, making them ideal for various applications.

No. of Terminals: 3

Having 3 terminals allows for easy connections and integration into circuits.

Package Style (Meter): IN-LINE

The in-line package style saves space on the circuit board, making it suitable for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high switching speeds and low power consumption, making this transistor efficient for various applications.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its reliability and performance characteristics.

Maximum Drain Current (ID): 10 A

With a high maximum drain current, this FET can handle high-power applications effectively.

Maximum Drain-Source On Resistance: 0.147 ohm

The low on-resistance ensures minimal power loss and efficient operation in switching applications.

Terminal Position: SINGLE

A single terminal position simplifies the connection process and ensures proper alignment in a circuit.

Case Connection: DRAIN

The drain connection allows for easy integration into circuits and ensures proper functionality in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1305 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.147 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SFT1305 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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