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SFT1407(TP)

Onsemi

SFT1407(TP) by Onsemi

SFT1407(TP) by Onsemi is a N-CHANNEL FET with 45V DS Breakdown Voltage and 14A Drain Current. Ideal for SWITCHING applications, it features a 0.028 ohm Drain-Source Resistance and 190pF Feedback Capacitance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 20W in PLASTIC/EPOXY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,042 parts In-Stock

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Digiode

USA . 1,375 parts In-Stock

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Kulean Microsystems

USA . 8,167 parts In-Stock

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Problanco Electronics

Mexico . 7,633 parts In-Stock

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SupplyDigital Components

Austria . 2,476 parts In-Stock

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TANS Electronics

Latvia . 1,451 parts In-Stock

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Corphita

USA . 905 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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UHIMA Technologies

Türkiye . 49 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality SFT1407(TP) Small Signal Field Effect Transistor by Onsemi. Designed for switching applications, this N-channel transistor offers a reliable performance in a variety of circuits. With a maximum drain current of 14 A and a low on resistance of 0.028 ohm, this transistor provides efficient power management and enhanced functionality. Trust Onsemi's expertise in semiconductor technology to deliver top-notch products that meet your needs. Experience the value and benefits of the SFT1407(TP) today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient conduction of electrons, enhancing the transistor's overall performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it user-friendly for engineers.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring fast and reliable performance.

Minimum DS Breakdown Voltage: 45 V

Can handle high voltage levels, increasing the range of potential applications.

Package Shape: RECTANGULAR

Easy to handle and mount on a PCB, facilitating assembly and installation.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and provides a secure connection to the PCB.

Operating Mode: ENHANCEMENT MODE

Allows for high efficiency and low power consumption in operation.

Maximum Drain Current (Abs) (ID): 14 A

Can handle high current levels, suitable for demanding applications.

No. of Terminals: 3

Simplifies the connection to the circuit, reducing complexity in design.

Maximum Power Dissipation (Abs): 20 W

Can dissipate heat effectively, ensuring reliable operation under various conditions.

Package Style (Meter): IN-LINE

Compact design allows for space-efficient integration in the circuit layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability, enhancing the overall quality of the transistor.

Maximum Power Dissipation Ambient: 1 W

Can operate effectively within specified temperature ranges, ensuring long-term reliability.

Transistor Element Material: SILICON

Offers high conductivity and durability, ensuring optimal performance over time.

Maximum Drain-Source On Resistance: 0.028 ohm

Low resistance minimizes power loss and heat generation, improving efficiency.

Terminal Position: SINGLE

Simplified connection layout, facilitating ease of use and installation.

Case Connection: DRAIN

Efficient connection for drain terminal, ensuring proper functionality within the circuit.

Maximum Feedback Capacitance (Crss): 190 pF

Allows for effective control of capacitance, optimizing performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1407(TP) attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (Abs) (ID):

14 A

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

190 pF

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SFT1407(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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