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SFT1345-H

Onsemi

SFT1345-H by Onsemi

The Onsemi SFT1345-H is a P-CHANNEL FET with 11A max drain current and 35W max power dissipation. Ideal for low-power applications, it features metal-oxide semiconductor technology and tin bismuth terminal finish.

Median Price

$0.454

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 22,837 parts In-Stock

1+ parts

-

100+ parts

$0.489

1k+ parts

$0.406

10k+ parts

$0.362

22,837

-

$0.489

$0.406

$0.362

DigiKey

USA . 22,152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.420

10k+ parts

$0.420

22,152

-

-

$0.420

$0.420

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 325 parts In-Stock

1+ parts

$0.381

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$0.381

-

-

-

Vyrian

USA . 1,101 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

1,101

$0.401

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,216 parts In-Stock

1+ parts

$0.361

100+ parts

-

1k+ parts

-

10k+ parts

-

2,216

$0.361

-

-

-

Corohmni

South Africa . 54 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

54

$0.401

-

-

-

Continental Prestige Electronics

USA . 22,152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.368

10k+ parts

-

22,152

-

-

$0.368

-

TANS Electronics

Latvia . 7,308 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,308

-

-

-

-

Kulean Microsystems

USA . 6,747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,747

-

-

-

-

SupplyDigital Components

Austria . 816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

816

-

-

-

-

UHIMA Technologies

Türkiye . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Problanco Electronics

Mexico . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76

-

-

-

-

Overview

Experience the exceptional performance of the SFT1345-H by Onsemi, a top-quality P-CHANNEL Small Signal FET designed for reliable and efficient operation. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor is ideal for a variety of applications. With a maximum drain current of 11A and a power dissipation of 35W, customers can trust in the durability and high performance of this product. Upgrade your electronic designs with the SFT1345-H and enjoy the benefits of superior quality and reliability.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high efficiency and low power consumption, making them ideal for battery-operated devices.

Configuration: SINGLE

Single configuration FETs are simple to use and easier to integrate into circuits, making them suitable for beginners and basic electronic designs.

Maximum Drain Current (Abs): 11 A

With a high maximum drain current, this FET can handle higher power applications, providing reliability and performance in demanding circuits.

Maximum Power Dissipation (Abs): 35 W

The high power dissipation capability of this FET allows it to efficiently handle heat generated during operation, ensuring longevity and stability in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers improved efficiency, reliability, and performance, making this FET a reliable choice for various electronic applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and corrosion resistance, ensuring secure connections and longevity of the FET in electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) SFT1345-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

11 A

Maximum Drain Current (ID):

11 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

No. of Elements:

1

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

SFT1345-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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