Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMD5836NLR2G
Onsemi
NTMD5836NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 9A Drain Current, and 0.0308 ohm On Resistance. It is used in applications requiring high power dissipation up to 1.5W, operating at temperatures up to 150 °C. Ideal for surface mount designs due to its GULL WING terminals and SMALL OUTLINE package style.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
9 A
5.7 A
.0308 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
1.5 W
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
DUAL
30
SILICON
NTMFS4825NFET1G
NTMFS4825NFET1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 17A max drain current, and 0.002 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Features small outline package style and operates in enhancement mode up to 150 °C.
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
17 A
.002 ohm
R-PDSO-F5
3
5
FLAT
SWITCHING
2N7002LT1H
2N7002LT1H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 7.5 ohm RDS(ON). It operates in Enhancement Mode, suitable for small outline applications like power management circuits due to its 115mA ID and built-in diode.
60 V
.115 A
7.5 ohm
5 pF
TO-236
R-PDSO-G3
-55 Cel
MATTE TIN
6HP04CH-TL-W
6HP04CH-TL-W by Onsemi is a P-CHANNEL FET with 0.37A max drain current and 0.6W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features TIN BISMUTH terminal finish.
SINGLE
.37 A
e6
P-CHANNEL
.6 W
Other Transistors
TIN BISMUTH
CPH3459-TL-W
CPH3459-TL-W by Onsemi is a N-CHANNEL FET with 0.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic devices requiring efficient power management in compact designs.
.5 A
1 W
CPH3362-TL-W
CPH3362-TL-W by Onsemi is a P-CHANNEL FET with 100V DS breakdown voltage and 0.7A max drain current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs in various electronic circuits.
100 V
.7 A
1.7 ohm
7.3 pF
CPH3462-TL-W
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
1 A
.785 ohm
PCP1402-TD-H
PCP1402-TD-H by Onsemi is a N-CHANNEL FET with 1.2A max drain current and 3.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as in surface mount configurations for compact electronic devices.
1.2 A
3.5 W
NTMFS4943NT1G
NTMFS4943NT1G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 125A IDM. Ideal for SWITCHING applications, it features a 0.011 ohm Drain-Source On Resistance and operates up to 150 °C.
31 mJ
8.3 A
.011 ohm
R-XDSO-F5
UNSPECIFIED
NOT SPECIFIED
125 A
Tin (Sn)
NTGS3443T1
NTGS3443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2.2A Drain Current, and 0.065 ohm On Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.
20 V
2.2 A
.065 ohm
R-PDSO-G6
e0
6
235
.5 W
Tin/Lead (Sn80Pb20)
NTGS3441T1
NTGS3441T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.65A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating in ENHANCEMENT MODE, it has 0.09 ohm On Resistance and can handle up to 0.5W Power Dissipation at 150 °C.
1.65 A
.09 ohm
TIN LEAD
NTGS3446T1
NTGS3446T1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 5.8A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
LOGIC LEVEL COMPATIBLE
5.8 A
2.5 A
.045 ohm
100 pF
240
1.6 W
NTMS10P02R2
NTMS10P02R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 4.5A Drain Current, and 0.014 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET is ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
4.5 A
8.8 A
.014 ohm
1010 pF
.4 W
CPH3461-TL-H
CPH3461-TL-H by Onsemi is a N-CHANNEL FET with 250V DS breakdown voltage, 0.35A drain current, and 7.2 ohm on resistance. It is used for switching applications in enhancement mode with built-in diode, operating at up to 150 °C. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
250 V
.35 A
7.2 ohm
NDDP010N25AZ-1H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Package Shape: RECTANGULAR;
10 A
.42 ohm
TO-251
R-PSIP-T3
IN-LINE
52 W
NO
THROUGH-HOLE
NDDP010N25AZT4H
NDDP010N25AZT4H by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 10A Drain Current, and 0.42 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
TO-252
R-PSSO-G2
PCP1302-TD-H
PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.
3 A
.266 ohm
TO-243AA
R-PSSO-F3
SFT1452-W
The Onsemi SFT1452-W is a N-CHANNEL FET with 3A max drain current and 26W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, using METAL-OXIDE SEMICONDUCTOR technology.
26 W
Tin/Bismuth (Sn/Bi)
NTGS1135PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
ULTRA LOW RESISTANCE
8 V
4.6 A
.031 ohm
NTUD3171PZT5G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .2 A;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.2 A
5 ohm
R-PDSO-F6
.2 W
NTZD3156CT1G
NTZD3156CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 0.54A drain current, 0.55 ohm on-resistance, and 150 °C max temp.
.54 A
.55 ohm
N-CHANNEL AND P-CHANNEL
.28 W
NTZD3156CT2G
NTZD3156CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 0.54A, on-resistance of 0.55 ohm, and operates at up to 150 °C. Suitable for surface mount with 6 terminals in a small outline package.
NTZD3156CT5G
NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.
NTJD4001NT2G
NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.
.25 A
2.5 ohm
12 pF
.272 W
NTK3142PT5G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Drain-Source On Resistance: 4 ohm; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 30;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.215 A
4 ohm
R-PDSO-F3
NTGD3133PT1G
NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.
1.6 A
.145 ohm
1.3 W
40
NTMS4935NR2G
NTMS4935NR2G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 10A ID, and 0.0051 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at max temp of 150 °C, it features built-in diode and METAL-OXIDE SEMICONDUCTOR technology.
.0051 ohm
NTTFS4932NTWG
NTTFS4932NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 79A Drain Current, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 0.0055 ohm On Resistance, and operates in ENHANCEMENT MODE. This MOSFET has a max power dissipation of 43W and can withstand temperatures up to 150 °C.
79 A
11 A
.0055 ohm
S-XDSO-N5
SQUARE
43 W
NO LEAD
NTTFS4937NTAG
NTTFS4937NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A ID, and 0.007 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package with NO LEAD terminals features a BUILT-IN DIODE and DUAL terminal position.
75 A
.007 ohm
43.1 W
Matte Tin (Sn) - annealed
NTTFS4937NTWG
NTTFS4937NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.007 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package features a BUILT-IN DIODE and NO LEAD terminals for surface mount assembly.
NTTFS4939NTWG
NTTFS4939NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 52A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 29.8W. This surface mount transistor has a SQUARE package shape and operates at up to 150 °C temperature.
52 A
8.9 A
.008 ohm
29.8 W
NTTFS4943NTWG
NTTFS4943NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 8A ID, and 0.011 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor features METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
8 A
NTTFS4945NTWG
NTTFS4945NTWG by Onsemi is a N-CHANNEL FET with built-in diode for switching applications. It features a 30V DS breakdown voltage, 7.1A max drain current, and 0.013 ohm max on resistance. This MOSFET has a square package shape, no lead terminals, and operates in enhancement mode.
7.1 A
.013 ohm
NTUD3127CT5G
NTUD3127CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode/resistor. Ideal for switching applications, it has 20V DS breakdown voltage, 0.16A max drain current, and 3 ohm max on-resistance. Operating at up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a small outline package.
.16 A
3 ohm
2.2 pF
NICKEL GOLD PALLADIUM
NTUD3128NT5G
NTUD3128NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.16A, and Max Power Dissipation of 0.2W. This small outline transistor operates in enhancement mode at temperatures up to 150 °C.
NTHD4102PT3G
NTHD4102PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max ID of 2.9A, and RDS(on) of 0.08 ohm. This small outline transistor operates in enhancement mode with a peak reflow temperature of 260 °C.
2.9 A
.08 ohm
R-XDSO-C8
C BEND
NTJD4158CT2G
NTJD4158CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It's used for switching applications in enhancement mode. Features include 30V breakdown voltage, 0.27W power dissipation, and -55 to 150 °C operating temperature range.
.27 W
NTLJS4149PTAG
NTLJS4149PTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.5A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
2.7 A
.062 ohm
S-PDSO-N6
3.2 W
NTLJS4149PTBG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;
2N7002ET3G
2N7002ET3G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with built-in diode, GULL WING terminals, and 150°C max temp.
.26 A
TO-236AB
.3 W
2N7002KT3G
2N7002KT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.32A Drain Current and 1.6ohm On Resistance. Operating at 150 °C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
.32 A
1.6 ohm
2N7002WT3G
2N7002WT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.31A Drain Current, and 1.6 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with built-in diode and resistor. Operates in ENHANCEMENT MODE at max temp of 150°C, making it suitable for various electronic devices.
.31 A
.33 W
NTZD5110NT5G
NTZD5110NT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include 60V DS breakdown voltage, 0.294A max drain current, and 1.6 ohm max on resistance. With small outline package style & operating temp up to 150 °C, it's suitable for various electronic designs.
.294 A
.25 W
TF202THC-5-TL-H
TF202THC-5-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, 150 °C max temp, and TIN BISMUTH finish. Ideal for surface mount applications in small signal circuits requiring high temperature tolerance.
JUNCTION
.1 W
NTHD3133PFT1G
NTHD3133PFT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.08 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.2 A
2.1 W
NTHD3133PFT3G
NTHD3133PFT3G by Onsemi is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 3.2A max drain current, and 0.08 ohm max on resistance. Ideal for enhancement mode operation in small outline packages with tin finish terminals.
NTHS4166NT1G
NTHS4166NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 8.2A max drain current, and 0.022 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a built-in diode, small outline package style, and can withstand up to 150°C operating temperature.
8.2 A
4.9 A
.022 ohm
R-PDSO-C8
2.2 W
NTJD3158CT1G
NTJD3158CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has a max drain current of 0.82A and on-resistance of 0.375 ohm. Operating at up to 150 °C, it features a peak reflow temp of 260°C and feedback capacitance of 5pF.
.82 A
.63 A
.375 ohm
.35 W
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