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NTUD3127CT5G

Onsemi

NTUD3127CT5G by Onsemi

NTUD3127CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode/resistor. Ideal for switching applications, it has 20V DS breakdown voltage, 0.16A max drain current, and 3 ohm max on-resistance. Operating at up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a small outline package.

Median Price

$0.383

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,995,303 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

1,995,303

-

$0.383

$0.318

$0.283

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,820 parts In-Stock

1+ parts

$0.298

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1,820

$0.298

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Prism Electronics

USA . 14,873 parts In-Stock

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14,873

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Rebound Electronics

UK . 8,000 parts In-Stock

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8,000

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Vyrian

USA . 6,451 parts In-Stock

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6,451

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Distributors (Availability)

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Corphita

USA . 595 parts In-Stock

1+ parts

$0.283

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-

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595

$0.283

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Corohmni

South Africa . 165 parts In-Stock

1+ parts

$0.314

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165

$0.314

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AZTECH Wire

Italy . 1,080 parts In-Stock

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$15.860

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1,080

$15.860

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Authorized Procurement Solutions

USA . 100,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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Perfect Parts

USA . 16,680 parts In-Stock

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Assy Fe

Spain . 8,000 parts In-Stock

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8,000

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Kulean Microsystems

USA . 7,740 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,439 parts In-Stock

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7,439

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Problanco Electronics

Mexico . 6,963 parts In-Stock

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6,963

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TANS Electronics

Latvia . 6,199 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 5,014 parts In-Stock

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5,014

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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794

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Overview

Discover the NTUD3127CT5G by Onsemi, a high-quality Small Signal Field Effect Transistor (FET) designed for switching applications. With a package body material of PLASTIC/EPOXY and N-CHANNEL AND P-CHANNEL configuration, this transistor offers reliability and performance. Its SEPARATE, 2 ELEMENTS design with built-in diode and resistor provides added convenience. Suitable for surface mount applications, this transistor ensures efficiency in operation. Trust Onsemi's expertise in semiconductor technology to deliver a product that exceeds expectations. Upgrade your electronic projects with the NTUD3127CT5G and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable packaging for the FET, protecting it from environmental factors and ensuring long-term performance.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Provides versatility in circuit design by offering both N-channel and P-channel options for different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Enhances the functionality of the FET by incorporating built-in diodes and resistors, reducing external component count and simplifying circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and compact mounting on PCBs, saving space and simplifying assembly processes.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for a wide range of applications where heat dissipation is a concern.

Maximum Drain Current (ID): 0.16 A

Capable of handling a significant amount of current, allowing for robust performance in demanding applications.

Maximum Drain-Source On Resistance: 3 ohm

Low on-resistance leads to minimal power loss and efficient operation, making it suitable for high-frequency switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTUD3127CT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.2 pF

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTUD3127CT5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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