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NTUD3174NZT5G

Onsemi

NTUD3174NZT5G by Onsemi

NTUD3174NZT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 0.22A Drain Current, and 1.5Ω On Resistance. Operating from -55 to 150 °C, it's ideal for small outline packages in SEMICONDUCTOR technology.

Median Price

$0.308

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 100,773 parts In-Stock

1+ parts

$1.170

100+ parts

$0.480

1k+ parts

$0.307

10k+ parts

$0.263

100,773

$1.170

$0.480

$0.307

$0.263

DigiKey

USA . 61,260 parts In-Stock

1+ parts

$1.170

100+ parts

$0.479

1k+ parts

$0.336

10k+ parts

$0.306

61,260

$1.170

$0.479

$0.336

$0.306

Arrow

USA . 8,000 parts In-Stock

1+ parts

-

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$0.238

8,000

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$0.238

Verical

USA . 8,000 parts In-Stock

1+ parts

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$0.228

8,000

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$0.228

Rochester

USA . 5,780 parts In-Stock

1+ parts

-

100+ parts

$0.308

1k+ parts

$0.256

10k+ parts

$0.228

5,780

-

$0.308

$0.256

$0.228

Distributors (In-Stock)

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Vyrian

USA . 579 parts In-Stock

1+ parts

$0.233

100+ parts

-

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579

$0.233

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Digiode

USA . 1,502 parts In-Stock

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$0.239

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1,502

$0.239

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Cyclops Electronics Ltd

UK . 1,798,897 parts In-Stock

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1,798,897

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Chip Stock

USA . 29,000 parts In-Stock

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29,000

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SPM Sales

USA . 2,381 parts In-Stock

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2,381

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Distributors (Availability)

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Corphita

USA . 2,151 parts In-Stock

1+ parts

$0.227

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$0.227

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Corohmni

South Africa . 208 parts In-Stock

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$0.233

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208

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Kepictronics

USA . 184,000 parts In-Stock

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184,000

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Perfect Parts

USA . 24,741 parts In-Stock

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Problanco Electronics

Mexico . 8,137 parts In-Stock

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S.R.D Solutions

India . 7,500 parts In-Stock

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TANS Electronics

Latvia . 7,161 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,922 parts In-Stock

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SupplyDigital Components

Austria . 4,314 parts In-Stock

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4,314

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Kulean Microsystems

USA . 2,638 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Metaverse IC Inc.

Canada . 544 parts In-Stock

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544

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GreenTree Electronics

Israel . 500 parts In-Stock

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500

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Overview

Discover the NTUD3174NZT5G by Onsemi, a top-notch Small Signal Field Effect Transistor designed for switching applications. With its high-quality construction and innovative technology, this N-CHANNEL transistor offers superior performance and reliability. The convenient surface mount design and compact package make it ideal for a wide range of electronic devices. Experience the benefits of enhanced power dissipation, low resistance, and efficient operation with this must-have component from a trusted manufacturer. Elevate your projects with the NTUD3174NZT5G and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high conductivity and fast switching speeds, making them ideal for applications requiring efficient performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it suitable for various electronic circuits and devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without experiencing failure, ensuring reliable operation.

Maximum Drain Current (ID): 0.22 A

Capable of handling a maximum drain current of 0.22A, this transistor can effectively control and carry current in electronic circuits without overheating or damage.

Maximum Drain-Source On Resistance: 1.5 ohm

The low on-resistance of 1.5 ohms allows for efficient current flow and minimal power loss, making this transistor energy-efficient and suitable for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTUD3174NZT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.22 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.6 pF

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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