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NTMS4935NR2G

Onsemi

NTMS4935NR2G by Onsemi

NTMS4935NR2G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 10A ID, and 0.0051 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at max temp of 150 °C, it features built-in diode and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$1.060

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 198,360 parts In-Stock

1+ parts

-

100+ parts

$1.060

1k+ parts

$0.880

10k+ parts

$0.784

198,360

-

$1.060

$0.880

$0.784

Avnet

USA . 195,860 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

$0.850

10k+ parts

$0.800

195,860

-

$0.920

$0.850

$0.800

Verical

USA . 143,360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.100

10k+ parts

$0.981

143,360

-

-

$1.100

$0.981

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 533 parts In-Stock

1+ parts

$0.824

100+ parts

-

1k+ parts

-

10k+ parts

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533

$0.824

-

-

-

Vyrian

USA . 4,478 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,478

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 220 parts In-Stock

1+ parts

$0.780

100+ parts

-

1k+ parts

-

10k+ parts

-

220

$0.780

-

-

-

Corohmni

South Africa . 54 parts In-Stock

1+ parts

$0.795

100+ parts

-

1k+ parts

-

10k+ parts

-

54

$0.795

-

-

-

Microchip USA

USA . 309 parts In-Stock

1+ parts

$5.395

100+ parts

-

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-

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309

$5.395

-

-

-

AZTECH Wire

Italy . 475 parts In-Stock

1+ parts

$9.980

100+ parts

-

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-

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475

$9.980

-

-

-

Continental Prestige Electronics

USA . 195,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.795

10k+ parts

-

195,860

-

-

$0.795

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Kepictronics

USA . 8,010 parts In-Stock

1+ parts

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8,010

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SupplyDigital Components

Austria . 6,245 parts In-Stock

1+ parts

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6,245

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TANS Electronics

Latvia . 5,120 parts In-Stock

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5,120

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A-Z Elektronik GmbH

Germany . 5,024 parts In-Stock

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5,024

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Problanco Electronics

Mexico . 3,490 parts In-Stock

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3,490

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Perfect Parts

USA . 1,792 parts In-Stock

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1,792

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Kulean Microsystems

USA . 1,072 parts In-Stock

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1,072

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UHIMA Technologies

Türkiye . 908 parts In-Stock

1+ parts

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100+ parts

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908

-

-

-

-

Overview

Unlock the power of reliable switching with the NTMS4935NR2G by Onsemi. As a leading manufacturer in Small Signal Field Effect Transistors, Onsemi delivers top-quality products with a single configuration and built-in diode for enhanced performance. Perfect for various applications, this N-channel transistor offers customers value and benefits like no other. Say goodbye to worries about breakdown voltage or operating temperature - Onsemi has got you covered. Upgrade your devices with the NTMS4935NR2G today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Enables efficient current flow in one direction, making it suitable for various switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse polarity and voltage spikes, enhancing the transistor's reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in controlling electrical signals.

Minimum DS Breakdown Voltage: 30 V

Can withstand voltage up to 30V, making it suitable for applications that require handling moderate power levels.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, facilitating the manufacturing process.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections, enhancing the durability and stability of the transistor in operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation enables precise control over the transistor's conductivity, making it ideal for high-speed switching applications.

No. of Terminals: 8

Having 8 terminals allows for versatile connectivity options, enabling integration into a wide range of electronic circuits and systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it suitable for compact electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-speed switching performance, low power consumption, and reliable operation in various environments.

Maximum Operating Temperature: 150 °C

Can operate efficiently at temperatures up to 150 °C, suitable for industrial and automotive applications that require high-temperature operation.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and electrical properties, ensuring consistent performance over a wide temperature range.

Terminal Finish: Tin (Sn)

Tin terminal finish offers good solderability and corrosion resistance, enhancing the lifespan and reliability of the transistor in operation.

Maximum Drain Current (ID): 10 A

Capable of handling high drain currents up to 10A, making it suitable for applications that require switching high-power loads.

Maximum Drain-Source On Resistance: 0.0051 ohm

Low drain-source on resistance results in minimal power loss and improved efficiency during operation, making it an energy-efficient choice.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options, enhancing the usability and integration of the transistor in various circuits.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for up to 40 seconds, ensuring reliable solder connections during manufacturing and assembly processes.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260 °C, ensuring proper soldering and assembly of the transistor in manufacturing processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMS4935NR2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.0051 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMS4935NR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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