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NTMS4117NR2G

Onsemi

NTMS4117NR2G by Onsemi

NTMS4117NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 13.3A ID, and 0.00525 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE with a max operating temperature of 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,566 parts In-Stock

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Vyrian

USA . 804 parts In-Stock

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SupplyDigital Components

Austria . 7,679 parts In-Stock

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Problanco Electronics

Mexico . 5,424 parts In-Stock

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TANS Electronics

Latvia . 1,698 parts In-Stock

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Kulean Microsystems

USA . 719 parts In-Stock

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Corohmni

South Africa . 330 parts In-Stock

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Corphita

USA . 152 parts In-Stock

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UHIMA Technologies

Türkiye . 30 parts In-Stock

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Overview

Upgrade your electronic devices with the NTMS4117NR2G by Onsemi, a high-quality N-channel FET perfect for switching applications. With Onsemi's reputation for reliability and innovation, you can trust that this transistor will deliver exceptional performance. Its built-in diode and low on-resistance make it a valuable addition to any circuit, providing efficiency and durability. Whether you're working on consumer electronics or industrial equipment, the NTMS4117NR2G offers unparalleled value and benefits that will elevate your project to the next level. Choose Onsemi for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring reliability and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-Channel type provides efficient switching capabilities, making it suitable for various applications where fast switching is required.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and saves space, making the product more compact and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and reliability in switching circuits.

Surface Mount: YES

Surface mount design enables easy installation on PCBs, saving assembly time and space in electronic devices.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, the transistor can handle higher voltage levels, increasing its versatility in different circuit designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures the transistor can withstand elevated temperatures, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 13.3 A

High maximum drain current of 13.3A allows the transistor to handle high current loads, making it ideal for power applications.

Maximum Drain-Source On Resistance: 0.00525 ohm

Low drain-source on resistance of 0.00525 ohm minimizes power losses and improves efficiency in circuit operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMS4117NR2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

13.3 A

Maximum Drain-Source On Resistance:

.00525 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMS4117NR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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