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NTMS5P02R2G

Onsemi

NTMS5P02R2G by Onsemi

NTMS5P02R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.95A and 0.033 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2 parts In-Stock

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$0.305

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$0.305

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Mouser Electronics

USA . 1,713 parts In-Stock

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$1.540

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$0.644

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$0.505

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$0.382

1,713

$1.540

$0.644

$0.505

$0.382

DigiKey

USA . 181 parts In-Stock

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$1.540

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$0.643

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$0.458

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181

$1.540

$0.643

$0.458

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Rochester

USA . 22,474 parts In-Stock

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$0.451

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$0.374

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$0.334

22,474

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$0.451

$0.374

$0.334

Verical

USA . 18,179 parts In-Stock

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$0.468

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$0.417

18,179

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Chip1Stop

Japan . 2,472 parts In-Stock

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$0.358

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$0.352

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2,472

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$0.352

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Distributors (In-Stock)

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Digiode

USA . 2,432 parts In-Stock

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$0.351

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2,432

$0.351

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Bristol Electronics

USA . 10,461 parts In-Stock

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$0.949

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$0.351

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$0.247

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10,461

$0.949

$0.351

$0.247

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Flip Electronics

USA . 55,000 parts In-Stock

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Chip Stock

USA . 46,000 parts In-Stock

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Vyrian

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Microfarads

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A2Z Electronics, Inc.

USA . 3,542 parts In-Stock

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Dan-Mar Components

USA . 3,221 parts In-Stock

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Sea View Technologies

USA . 2,557 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,927 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,752 parts In-Stock

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Component Sense

UK . 807 parts In-Stock

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Prism Electronics

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Nova Conductors

Japan . 150 parts In-Stock

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Cyclops Electronics Ltd

UK . 120 parts In-Stock

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120

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Distributors (Availability)

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Corphita

USA . 1,510 parts In-Stock

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$0.332

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1,510

$0.332

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Corohmni

South Africa . 294 parts In-Stock

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$0.353

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Semicontronic

India . 14,514 parts In-Stock

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$0.650

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$0.634

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$0.630

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14,514

$0.650

$0.634

$0.630

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Ampacity Inc.

Singapore . 14,416 parts In-Stock

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$0.650

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Aztec Data Supply Inc.

USA . 3,923 parts In-Stock

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$1.030

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Perfect Parts

USA . 575,385 parts In-Stock

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RC Electronics

USA . 64,771 parts In-Stock

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Continental Prestige Electronics

USA . 48,709 parts In-Stock

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Lixinc

USA . 19,862 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,492 parts In-Stock

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TANS Electronics

Latvia . 4,499 parts In-Stock

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SupplyDigital Components

Austria . 4,365 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Argo Parts USA

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Assy Fe

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Problanco Electronics

Mexico . 851 parts In-Stock

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Kulean Microsystems

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Futuretech Components

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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ChipstoGo Electronic ltd

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Overview

Experience the next level of performance with the NTMS5P02R2G by Onsemi. Crafted with precision and expertise, this P-Channel FET offers unparalleled quality and reliability for all your switching applications. With a single configuration and built-in diode, this transistor provides seamless operation and efficiency. Whether you're looking to enhance your electronic devices or optimize power management systems, the NTMS5P02R2G delivers unmatched value and benefits. Trust Onsemi to elevate your projects to new heights with this cutting-edge small signal FET.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are efficient in certain circuit applications and can provide better performance in specific configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast response times and efficient operation.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltages without failing.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and fitting in compact spaces.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control over the transistor's conductivity, improving overall performance.

Maximum Drain Current (Abs) (ID): 2.75 A

Capable of handling high current levels, making it suitable for various applications.

Maximum Power Dissipation (Abs): 0.38 W

Efficient power dissipation capability ensures the transistor stays within safe operating temperatures.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for dense circuit layouts.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand extreme conditions.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, offering good performance and durability.

Maximum Drain-Source On Resistance: 0.033 ohm

Low on-resistance ensures minimal power loss and efficient operation.

Maximum Feedback Capacitance (Crss): 380 pF

Low feedback capacitance helps reduce noise and interference in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMS5P02R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.75 A

Maximum Drain Current (ID):

3.95 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

380 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMS5P02R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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