Loading...

TF202THC-5-TL-H

Onsemi

TF202THC-5-TL-H by Onsemi

TF202THC-5-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, 150 °C max temp, and TIN BISMUTH finish. Ideal for surface mount applications in small signal circuits requiring high temperature tolerance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,014 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,014

-

-

-

-

Digiode

USA . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

118

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 412 parts In-Stock

1+ parts

$8.790

100+ parts

-

1k+ parts

-

10k+ parts

-

412

$8.790

-

-

-

Authorized Procurement Solutions

USA . 22,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,000

-

-

-

-

TANS Electronics

Latvia . 8,391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,391

-

-

-

-

Metaverse IC Inc.

Canada . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Lixinc

USA . 7,737 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,737

-

-

-

-

Perfect Parts

USA . 7,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,375

-

-

-

-

SupplyDigital Components

Austria . 7,286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,286

-

-

-

-

Kulean Microsystems

USA . 6,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,060

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,613

-

-

-

-

Problanco Electronics

Mexico . 3,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,314

-

-

-

-

Corphita

USA . 689 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

689

-

-

-

-

UHIMA Technologies

Türkiye . 395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

395

-

-

-

-

Corohmni

South Africa . 270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

270

-

-

-

-

Overview

Discover the power of innovation with the TF202THC-5-TL-H by Onsemi. As a leading manufacturer in small signal field effect transistors, Onsemi delivers top-quality products that exceed industry standards. Ideal for a wide range of applications, this N-CHANNEL FET offers unmatched performance and reliability. With a maximum power dissipation of 0.1 W and a maximum operating temperature of 150 °C, this transistor is designed to meet your needs. Trust Onsemi to provide exceptional value and cutting-edge technology for all your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower on-state resistance and higher transconductance, making them suitable for high performance applications.

Surface Mount: Yes

Surface mount technology allows for easier and more efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.1 W

With a low maximum power dissipation, this FET can operate efficiently without overheating, improving reliability and longevity.

Field Effect Transistor Technology: JUNCTION

JUNCTION FETs offer high input impedance and low output impedance, making them ideal for low power applications and high frequency circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to withstand elevated temperatures, ensuring stable performance in various operating conditions.

Terminal Finish: TIN BISMUTH

TIN BISMUTH terminal finish provides good solderability and reliability, allowing for secure and durable connections in electronic assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature reduces the risk of thermal stress on the component during soldering, improving overall reliability.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this FET can withstand the harsh conditions of the soldering process, ensuring proper solder joints and reliable connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) TF202THC-5-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TF202THC-5-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1