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TF202THC-4-TL-H

Onsemi

TF202THC-4-TL-H by Onsemi

TF202THC-4-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. Featuring JUNCTION technology and operating up to 150 °C, it has Tin/Bismuth terminal finish. Ideal for small signal amplification in electronic circuits.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,065,815 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

-

2,065,815

$0.040

$0.040

$0.040

-

Chip1Stop

Japan . 7,940 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

-

10k+ parts

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7,940

$10.000

-

-

-

DigiKey

USA . 49,289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.030

49,289

-

-

-

$0.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,114 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

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1,114

$0.030

-

-

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Digiode

USA . 2,390 parts In-Stock

1+ parts

$0.031

100+ parts

-

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2,390

$0.031

-

-

-

J2 Sourcing AB

Sweden . 40 parts In-Stock

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-

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 303 parts In-Stock

1+ parts

$0.030

100+ parts

-

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303

$0.030

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-

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Corohmni

South Africa . 484 parts In-Stock

1+ parts

$0.030

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-

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484

$0.030

-

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Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$0.568

100+ parts

$0.517

1k+ parts

$0.466

10k+ parts

-

870

$0.568

$0.517

$0.466

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Perfect Parts

USA . 74,782 parts In-Stock

1+ parts

-

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74,782

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Continental Prestige Electronics

USA . 49,289 parts In-Stock

1+ parts

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$0.031

49,289

-

-

-

$0.031

Authorized Procurement Solutions

USA . 7,940 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,940

-

-

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GreenTree Electronics

Israel . 7,940 parts In-Stock

1+ parts

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7,940

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-

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Kulean Microsystems

USA . 7,238 parts In-Stock

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7,238

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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SupplyDigital Components

Austria . 2,205 parts In-Stock

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2,205

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TANS Electronics

Latvia . 1,848 parts In-Stock

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1,848

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Problanco Electronics

Mexico . 1,537 parts In-Stock

1+ parts

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100+ parts

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1,537

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UHIMA Technologies

Türkiye . 667 parts In-Stock

1+ parts

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667

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Overview

Upgrade your electronic devices with the TF202THC-4-TL-H by Onsemi, a top-quality N-CHANNEL small signal FET that promises high performance and reliability. With its cutting-edge JUNCTION technology and surface mount capability, this product is perfect for a wide range of applications. Experience the exceptional value and advantages that Onsemi brings to the table, and take your projects to the next level with ease.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have higher mobility and faster switching speed compared to P-channel transistors, making them suitable for high-frequency applications.

Surface Mount: YES

Surface mount technology allows for easy and convenient PCB mounting, saving space and enabling automated manufacturing processes.

Maximum Power Dissipation (Abs): 0.1 W

With a low power dissipation of 0.1W, this transistor is suitable for low-power applications where energy efficiency is important.

Field Effect Transistor Technology: JUNCTION

Junction FETs offer high input impedance and low noise, making them suitable for amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliability and stability under extended operating conditions.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The Tin/Bismuth terminal finish provides good solderability and is environmentally friendly compared to other finishes like lead-based ones.

Technical Specifications

Small Signal Field Effect Transistors (FET) TF202THC-4-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

TF202THC-4-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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