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NX7002AK,215

NXP Semiconductors

NX7002AK,215 by NXP Semiconductors

NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.

Median Price

$0.036

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Newark

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EBV Elektronik

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Verical

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Rochester

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Farnell

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Element14

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Semicontronic

India . 3,038,466 parts In-Stock

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Ampacity Inc.

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Italy . 13,868 parts In-Stock

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Continental Prestige Electronics

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Aztec Data Supply Inc.

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Modulus Dynamics

Lithuania . 7,214 parts In-Stock

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Advanced Electronics

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GreenTree Electronics

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Perfect Parts

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XScomponents

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UNI Independent Distributors

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Overview

Upgrade your electronic devices with the NX7002AK,215 by NXP Semiconductors. Manufactured with precision and expertise, this small signal field-effect transistor offers reliable performance in a variety of switching applications. With a maximum drain current of 0.19A and a minimum DS breakdown voltage of 60V, this N-channel transistor provides exceptional efficiency and power dissipation. Whether you're designing consumer electronics or industrial equipment, the NX7002AK,215 delivers value, reliability, and quality that exceeds expectations. Experience the advantages of cutting-edge technology with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics compared to P-Channel transistors, making this product a good choice for various electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds versatility to the transistor's usage, allowing for easier implementation in switching circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in rapidly changing circuit conditions.

Surface Mount: YES

Surface mount transistors are easier to integrate onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages and provide more protection against electrical spikes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and efficiency in switching applications compared to depletion mode transistors.

Maximum Drain Current (Abs): 0.19 A

With a relatively high maximum drain current, this transistor can handle moderate power requirements in various circuits.

Maximum Power Dissipation (Abs): 1.33 W

The high maximum power dissipation rating ensures that the transistor can handle heat dissipation effectively, leading to better overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in a wide range of environments without overheating.

Maximum Drain-Source On Resistance: 5.2 ohm

Low on-resistance means less power loss in the transistor, resulting in improved efficiency and performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX7002AK,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.19 A

Maximum Drain Current (ID):

.19 A

Maximum Drain-Source On Resistance:

5.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NX7002AK,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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