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NX7002AKS

NXP Semiconductors

NX7002AKS by NXP Semiconductors

The NXP Semiconductors NX7002AKS is a Small Signal FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.17A Drain Current, and 5.2 ohm On Resistance. With a max operating temperature of 150°C, this MOSFET is ideal for various electronic circuits requiring high-speed switching capabilities.

Median Price

$0.059

Lifecycle Status

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5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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Vyrian

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Digiode

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Argo Parts USA

USA . 3,141 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.056

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Continental Prestige Electronics

USA . 412 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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Aztec Data Supply Inc.

USA . 539 parts In-Stock

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AZTECH Wire

Italy . 8,369 parts In-Stock

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One Stop Electronics

USA . 1,138 parts In-Stock

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Semicontronic

India . 297 parts In-Stock

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Ampacity Inc.

Singapore . 987 parts In-Stock

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A-Z Elektronik GmbH

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Supply Digital

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Overview

Experience unparalleled performance and reliability with the NX7002AKS from NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-notch quality small signal field effect transistors that are perfect for switching applications. The NX7002AKS offers customers the value of enhanced efficiency and durability, making it the ideal choice for a wide range of electronic devices. With a breakthrough design and advanced technology, this transistor ensures smooth operation and long-lasting performance. Upgrade your products today with the NX7002AKS and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and fast switching speeds, making them ideal for switching applications.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages, making it suitable for demanding applications.

Maximum Drain Current (ID): 0.17 A

High maximum drain current of 0.17A allows the transistor to handle larger currents, making it suitable for various switching applications.

Maximum Drain-Source On Resistance: 5.2 ohm

Low drain-source on resistance of 5.2 ohm ensures efficient power handling and minimal power loss in the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures that the transistor can operate reliably in extreme temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX7002AKS attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

5.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NX7002AKS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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