Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NX7002BKSX by Nexperia is a N-CHANNEL FET with 60V DS breakdown voltage, 0.24A max drain current, and 3.2Ω max on resistance. It is used for switching applications in enhancement mode, featuring a small outline package style and gull wing terminals for surface mount assembly.
Median Price
$0.070
Lifecycle Status
Suppliers In-Stock
18
In-Stock Inventory
1k+
Chip1Stop
1+ parts
$0.239
100+ parts
-
1k+ parts
10k+ parts
Mouser Electronics
$0.260
$0.099
$0.073
$0.052
DigiKey
Rochester
$0.061
$0.054
Verical
$0.068
EBV Elektronik
Element14
$0.155
$0.109
$0.107
Farnell
$0.053
$0.045
Newark
$0.153
Arrow
$0.029
TTI
$0.032
Avnet
$0.049
Future Electronics
$0.028
Nova Conductors
$0.076
TME
$0.190
$0.082
$0.055
$0.051
Chip Stock
Classic Components Corporation
Vyrian
Ampacity Inc.
$0.026
Semicontronic
$0.025
AZTECH Wire
$0.050
Argo Parts USA
$0.074
Netroflash
$0.071
Advanced Electronics
Aztec Data Supply Inc.
$1.420
Corohmni
$1.482
Continental Prestige Electronics
$0.040
Eastek
Perfect Parts
GreenTree Electronics
RC Electronics
$0.080
Authorized Procurement Solutions
Futuretech Components
Lixinc
Supply Digital
Andel Nordic
Kepictronics
This material provides durability and protection for the FET, making it a reliable choice for various applications.
The N-channel configuration allows for efficient current flow and low resistance, making this FET suitable for switching applications.
With two separate elements and a built-in diode, this FET offers enhanced functionality and versatility in circuit design.
Specifically designed for switching applications, this FET offers fast and efficient performance in controlling electronic circuits.
Being surface mountable, this FET is easy to install and saves space in compact electronic devices.
With a high breakdown voltage, this FET can handle higher voltages without the risk of damaging the circuit.
The rectangular shape of the package allows for easy mounting and integration into circuit boards.
The gull wing terminals provide secure connections and ease of soldering during assembly.
Operating in enhancement mode, this FET offers precise control over the flow of current in the circuit.
Featuring two elements, this FET provides flexibility in circuit design and enables the use of dual configurations.
With six terminals, this FET offers multiple connection points for versatile circuit setups.
The small outline package style makes this FET compact and ideal for space-constrained applications.
Utilizing metal-oxide semiconductor technology, this FET offers high performance and reliability in various electronic circuits.
Made of silicon, a widely used semiconductor material, this FET ensures consistent and efficient operation in different conditions.
With a maximum drain current of 0.24 A, this FET can handle moderate current loads in electronic circuits.
Featuring a low drain-source on resistance, this FET minimizes power loss and ensures efficient circuit operation.
The dual terminal position allows for versatile connectivity options in circuit design and layout.
With a maximum reflow time of 40 seconds, this FET can withstand high-temperature soldering processes without compromising its performance.
The peak reflow temperature of 260°C ensures proper soldering and reliability during assembly processes.
This FET complies with the IEC-60134 standard, ensuring quality and reliability in performance for various applications.
Small Signal Field Effect Transistors (FET) NX7002BKSX attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NX7002BKSX Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Label Chg 12/Mar/2017 All Dev Label Chgs 2/Aug/2020
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
MMBT2222ALT1G
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
2N2222A
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
1552200253
Molex
WIRE AND CABLE;
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
SS14
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
SMBJ18CA
Zowie Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
BSS84AKS,115
Nexperia
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 8.5 ohm; Minimum DS Breakdown Voltage: 50 V;
MMBF170LT1
MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
IRLML5103TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
2N7002KT1G
2N7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.3W. This small outline transistor features a built-in diode and GULL WING terminals, suitable for surface mount configurations.
FDG6332C_F085
FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
BS170P
Diodes Incorporated
The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.
BSS139H6906XTSA1
Infineon Technologies
BSS139H6906XTSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30Ω RDS(ON). Ideal for DEPLETION MODE operation in applications requiring low feedback capacitance (3.3pF), such as small signal amplification in electronic circuits.
BSS138NH6433
Infineon's BSS138NH6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in automotive electronics due to AEC-Q101 and IEC-61249-2-21 compliance.
SI2301BDS-T1-E3
SI2301BDS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.1 ohm RDS(on). Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
MGSF1N03LT1G
MGSF1N03LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.6A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology, it offers reliable performance in small outline packages at up to 150°C.
MMBFJ112
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
BSS123L
BSS123L by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode. This small outline transistor in gull wing package is designed for surface mount technology.
FDC6506P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; No. of Terminals: 6; Qualification: Not Qualified;
2N7000G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
FDV301N
FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
BSS138LT1
Leshan Radio
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
BSS84-7-F
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
2N7002BKV,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): .34 A; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PESD2V8R1BSF
74LVC1G14GX4
INVERTER; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
PUSB3BB2DF
PMEG050T150EIPD
PSMNR70-30YLH
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
NCR420Z
LED DISPLAY DRIVER; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
PMH260UNE
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
BAS16TH
PESD3V3T1BL
MJD45H11
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
BAS21TH
PNE20030EP
NCR320U
LED DISPLAY DRIVER; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
74HC4053PW
SPDT; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
PSMNR51-25YLH
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn);
BUK7S0R7-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
GAN063-650WSA
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
PMEG120G20ELR
NCR321PAS
LED DISPLAY DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: HVSON; Package Shape: SQUARE;
MJD31CA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
NX7002AK,215
NXP Semiconductors
NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: IEC-60134; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
NX7002AKW,115
NXP Semiconductors' NX7002AKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm max on-resistance. The small outline package style and GULL WING terminals make it suitable for surface mount designs in various electronic devices.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; No. of Terminals: 3;
NX7002AKS,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING; No. of Terminals: 8;
NX7002BKMBYL
NX7002BKMBYL by Nexperia is a N-CHANNEL FET with 60V DS breakdown voltage. It's a single transistor with built-in diode for switching applications. Features include 0.35A max drain current, 3.2Ω max on resistance, and operates in enhancement mode.
NX7002AKVL
NX7002AKVL by Nexperia is a N-channel FET with 60V DS breakdown voltage. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. With 3 terminals, Gull Wing form, and small outline package style, it offers 0.3A max drain current and 5.2 ohm on-resistance.
NX7002BKMYL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; JESD-609 Code: e3; Package Shape: RECTANGULAR;
NX7002BKWX
NX7002BKWX by Nexperia is a N-channel FET with 60V DS breakdown voltage, 0.24A max drain current, and 3.2 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style for surface mount assembly.
NX7002BKXBZ
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
NX7002BKR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30; Minimum DS Breakdown Voltage: 60 V;
NX7002AKA
NX7002AKA by NXP Semiconductors is a small signal field effect transistor (FET) with a min DS breakdown voltage of 60V. It is an N-channel transistor with a single configuration and built-in diode, suitable for switching applications. This surface mount transistor has a max drain current of 0.19A and a max drain-source on resistance of 5.2 ohm.
NX7002AKS
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G8;
NX7002BKVL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOGIC LEVEL COMPATIBLE; Terminal Finish: TIN; Terminal Position: DUAL;
NX7002AKW
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
NX7002BKM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved