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NTGD3133PT1G

Onsemi

NTGD3133PT1G by Onsemi

NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.

Median Price

$0.401

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

9,000

-

$0.357

$0.296

$0.264

DigiKey

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.450

10k+ parts

-

9,000

-

-

$0.450

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.401

10k+ parts

$0.330

9,000

-

-

$0.401

$0.330

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 414 parts In-Stock

1+ parts

$0.277

100+ parts

-

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-

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414

$0.277

-

-

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

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51,000

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-

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Vyrian

USA . 6,019 parts In-Stock

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6,019

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 914 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

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-

914

$0.263

-

-

-

Corohmni

South Africa . 397 parts In-Stock

1+ parts

$0.292

100+ parts

-

1k+ parts

-

10k+ parts

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397

$0.292

-

-

-

AZTECH Wire

Italy . 282 parts In-Stock

1+ parts

$19.550

100+ parts

-

1k+ parts

-

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282

$19.550

-

-

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Kepictronics

USA . 306,000 parts In-Stock

1+ parts

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306,000

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.285

10k+ parts

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9,000

-

-

$0.285

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TANS Electronics

Latvia . 7,408 parts In-Stock

1+ parts

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7,408

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Problanco Electronics

Mexico . 5,403 parts In-Stock

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5,403

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Kulean Microsystems

USA . 5,001 parts In-Stock

1+ parts

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5,001

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

1+ parts

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100+ parts

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2,700

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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375

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SupplyDigital Components

Austria . 45 parts In-Stock

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45

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Overview

Unleash the power of cutting-edge technology with the NTGD3133PT1G by Onsemi. This high-quality Small Signal Field Effect Transistor (FET) offers superior performance and reliability in switching applications. Manufactured by industry leader Onsemi, this N-CHANNEL transistor features a separate configuration with 2 elements and a built-in diode for added convenience. With a maximum drain current of 2.5A and a maximum power dissipation of 1.3W, this FET is designed to exceed expectations. Elevate your projects with the NTGD3133PT1G and experience the difference in quality and efficiency it brings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have higher electron mobility, making them suitable for high-speed switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for greater flexibility in circuit design and the built-in diode enhances the efficiency of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance when turning circuits on and off.

Surface Mount: YES

Surface mount packaging enables easy installation on circuit boards and saves space in compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V provides a good safety margin for the transistor in various applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards and easy integration into electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and require less power to operate, increasing overall efficiency.

Maximum Drain Current (Abs) (ID): 2.5 A

High maximum drain current allows for handling higher loads and power levels in circuits.

No. of Elements: 2

Having two elements increases the versatility of the transistor and allows for more complex circuit designs.

Maximum Power Dissipation (Abs): 1.3 W

The maximum power dissipation rating of 1.3W ensures the transistor can handle heat generated during operation.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space on circuit boards and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to operate in harsh environments without overheating.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability in semiconductor devices like transistors.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability for easy installation on circuit boards.

Maximum Drain-Source On Resistance: 0.145 ohm

Low drain-source on resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy connection to external circuitry and facilitates circuit design.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for up to 40 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Can endure peak reflow temperatures of 260 °C during soldering process, making it suitable for automated assembly lines.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGD3133PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.145 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGD3133PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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