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NTGD3147FT1G

Onsemi

NTGD3147FT1G by Onsemi

NTGD3147FT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.145 ohm RDS(ON). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 41,000 parts In-Stock

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Vyrian

USA . 5,845 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 824 parts In-Stock

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Component Stockers USA

USA . 420 parts In-Stock

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$99.990

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Kepictronics

USA . 74,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,524 parts In-Stock

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SupplyDigital Components

Austria . 6,485 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,964 parts In-Stock

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TANS Electronics

Latvia . 1,873 parts In-Stock

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Corphita

USA . 1,114 parts In-Stock

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Kulean Microsystems

USA . 521 parts In-Stock

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South Africa . 383 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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Overview

Enhance your electronic devices with the NTGD3147FT1G from Onsemi, a top-quality P-Channel Small Signal FET perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this transistor offers reliable performance and efficiency. With a built-in diode and an operating mode of enhancement, this FET is designed to optimize functionality. Whether you're working on consumer electronics, industrial controls, or automotive systems, this product delivers exceptional value and benefits for all your needs. Trust Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Offers low power consumption and high input impedance, making it suitable for battery-operated devices.

Transistor Application: SWITCHING

Designed for fast switching speeds, ideal for applications that require quick on/off transitions.

Minimum DS Breakdown Voltage: 20 V

Can withstand up to 20 volts without breakdown, ensuring reliable operation in various voltage conditions.

Surface Mount: YES

Can be easily mounted on the surface of a circuit board, saving space and simplifying assembly.

Maximum Drain Current (ID): 2.2 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.145 ohm

Provides low on-resistance, leading to minimal power loss and efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGD3147FT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.145 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGD3147FT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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