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NTGD4167CT1G

Onsemi

NTGD4167CT1G by Onsemi

NTGD4167CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications, with max drain current of 2.6A and on-resistance of 0.09 ohm. This MOSFET has a breakdown voltage of 30V and can handle up to 1.1W power dissipation, suitable for various electronic circuits.

Median Price

$0.272

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 7,390 parts In-Stock

1+ parts

$0.225

100+ parts

$0.206

1k+ parts

$0.190

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7,390

$0.225

$0.206

$0.190

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Mouser Electronics

USA . 15,593 parts In-Stock

1+ parts

$0.950

100+ parts

$0.321

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$0.246

10k+ parts

$0.177

15,593

$0.950

$0.321

$0.246

$0.177

DigiKey

USA . 1,140,245 parts In-Stock

1+ parts

$0.960

100+ parts

$0.388

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$0.270

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$0.205

1,140,245

$0.960

$0.388

$0.270

$0.205

Flip Electronics (Authorized)

USA . 135,000 parts In-Stock

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Master Electronics

USA . 8,683 parts In-Stock

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$0.169

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$0.157

8,683

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$0.169

$0.157

Verical

USA . 8,500 parts In-Stock

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$0.258

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$0.197

8,500

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$0.258

$0.197

Arrow

USA . 6,000 parts In-Stock

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$0.182

6,000

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$0.182

Farnell

UK . 4,616 parts In-Stock

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$0.285

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$0.226

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4,616

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$0.285

$0.226

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Element14

Singapore . 4,616 parts In-Stock

1+ parts

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100+ parts

$0.509

1k+ parts

$0.405

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4,616

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$0.509

$0.405

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Chip1Stop

Japan . 3,622 parts In-Stock

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Distributors (In-Stock)

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Greenchips

USA . 3,000 parts In-Stock

1+ parts

$0.167

100+ parts

$0.159

1k+ parts

$0.151

10k+ parts

$0.137

3,000

$0.167

$0.159

$0.151

$0.137

Digiode

USA . 1,245 parts In-Stock

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$0.248

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$0.248

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Nova Conductors

Japan . 10 parts In-Stock

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$0.309

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10

$0.309

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Flip Electronics

USA . 135,000 parts In-Stock

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Vyrian

USA . 120,551 parts In-Stock

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Chip Stock

USA . 114,500 parts In-Stock

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IBS Electronics

USA . 29,683 parts In-Stock

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$0.237

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$0.219

29,683

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$0.237

$0.219

NAC Semi

USA . 24,000 parts In-Stock

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$0.232

24,000

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$0.232

Cyclops Electronics Ltd

UK . 21,841 parts In-Stock

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21,841

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Velocity Electronics

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 120,795 parts In-Stock

1+ parts

$0.152

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120,795

$0.152

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Semicontronic

India . 119,438 parts In-Stock

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$0.152

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$0.148

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$0.147

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119,438

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$0.147

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Corohmni

South Africa . 214 parts In-Stock

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$0.161

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214

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Corphita

USA . 356 parts In-Stock

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$0.235

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356

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.279

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$0.265

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$0.265

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100

$0.279

$0.265

$0.265

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.309

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$0.303

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1,000

$0.309

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Argo Parts USA

USA . 580 parts In-Stock

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$0.309

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$0.300

580

$0.309

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$0.300

Aztec Data Supply Inc.

USA . 2,518 parts In-Stock

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$0.320

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2,518

$0.320

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Continental Prestige Electronics

USA . 7,644 parts In-Stock

1+ parts

$0.634

100+ parts

$0.356

1k+ parts

$0.215

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$0.167

7,644

$0.634

$0.356

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$0.167

Perfect Parts

USA . 1,120,974 parts In-Stock

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RC Electronics

USA . 89,119 parts In-Stock

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Kepictronics

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Futuretech Components

Singapore . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 7,882 parts In-Stock

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Kulean Microsystems

USA . 7,073 parts In-Stock

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TANS Electronics

Latvia . 6,534 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,483 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.510

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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S.R.D Solutions

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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Lixinc

USA . 276 parts In-Stock

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276

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Overview

Enhance your electronic devices with the NTGD4167CT1G by Onsemi! As a trusted manufacturer, Onsemi delivers top-quality Small Signal Field Effect Transistors (FET) like this one, perfect for switching applications. With its N-CHANNEL and P-CHANNEL configuration, this transistor offers seamless performance and reliability. Say goodbye to overheating thanks to its maximum power dissipation of 1.1W and enjoy smooth operation with its low drain-source on resistance. Upgrade your tech with the NTGD4167CT1G and experience enhanced efficiency and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for compact electronic devices.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This transistor offers both N-channel and P-channel options, providing flexibility in circuit design and application.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and a built-in diode simplifies circuit design and saves board space.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast and efficient performance in turning on and off electronic signals.

Surface Mount: YES

The surface-mount capability allows for easy and secure placement on circuit boards, enhancing the overall design and layout.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle high voltage fluctuations without damage.

Package Shape: RECTANGULAR

The rectangular package shape ensures easy integration into standard electronic circuits and layouts.

Terminal Form: GULL WING

The gull-wing terminal form provides a strong connection and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the transistor's conductivity, enabling efficient use in various applications.

No. of Elements: 2

With 2 elements, this transistor offers dual functionality in a single package, saving space and simplifying circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGD4167CT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.6 A

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGD4167CT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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