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NTGD3148NT1G

Onsemi

NTGD3148NT1G by Onsemi

NTGD3148NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 3A and 0.07 ohm RDS(on), it offers efficient performance in small outline packages at up to 150°C.

Median Price

$0.325

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,238 parts In-Stock

1+ parts

$0.678

100+ parts

$0.283

1k+ parts

$0.196

10k+ parts

$0.156

3,238

$0.678

$0.283

$0.196

$0.156

DigiKey

USA . 8,237 parts In-Stock

1+ parts

$0.810

100+ parts

$0.326

1k+ parts

$0.224

10k+ parts

$0.169

8,237

$0.810

$0.326

$0.224

$0.169

Mouser Electronics

USA . 4,889 parts In-Stock

1+ parts

$0.810

100+ parts

$0.326

1k+ parts

$0.224

10k+ parts

$0.171

4,889

$0.810

$0.326

$0.224

$0.171

Flip Electronics (Authorized)

USA . 87,000 parts In-Stock

1+ parts

-

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87,000

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Avnet

USA . 39,000 parts In-Stock

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39,000

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Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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$0.154

6,000

-

-

-

$0.154

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,000

-

-

-

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Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

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$0.167

6,000

-

-

-

$0.167

Farnell

UK . 4,030 parts In-Stock

1+ parts

-

100+ parts

$0.325

1k+ parts

$0.254

10k+ parts

-

4,030

-

$0.325

$0.254

-

Element14

Singapore . 4,030 parts In-Stock

1+ parts

-

100+ parts

$0.335

1k+ parts

$0.262

10k+ parts

-

4,030

-

$0.335

$0.262

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Verical

USA . 2,296 parts In-Stock

1+ parts

-

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$0.188

2,296

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$0.188

Rochester

USA . 2,296 parts In-Stock

1+ parts

-

100+ parts

$0.203

1k+ parts

$0.169

10k+ parts

$0.150

2,296

-

$0.203

$0.169

$0.150

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 400 parts In-Stock

1+ parts

$0.224

100+ parts

-

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400

$0.224

-

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Digiode

USA . 1,298 parts In-Stock

1+ parts

$0.494

100+ parts

-

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1,298

$0.494

-

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Cyclops Electronics Ltd

UK . 91,278 parts In-Stock

1+ parts

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91,278

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IBS Electronics

USA . 87,000 parts In-Stock

1+ parts

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100+ parts

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$0.178

87,000

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$0.178

Flip Electronics

USA . 75,000 parts In-Stock

1+ parts

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75,000

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Vyrian

USA . 48,558 parts In-Stock

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48,558

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.400

6,000

-

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$0.400

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 48,538 parts In-Stock

1+ parts

$0.131

100+ parts

-

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48,538

$0.131

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Corohmni

South Africa . 180 parts In-Stock

1+ parts

$0.154

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180

$0.154

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.220

100+ parts

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$0.211

10k+ parts

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1,000

$0.220

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$0.211

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Argo Parts USA

USA . 2,137 parts In-Stock

1+ parts

$0.224

100+ parts

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$0.217

2,137

$0.224

-

-

$0.217

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.303

100+ parts

$0.279

1k+ parts

$0.261

10k+ parts

-

500

$0.303

$0.279

$0.261

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Corphita

USA . 2,381 parts In-Stock

1+ parts

$0.468

100+ parts

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2,381

$0.468

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Aztec Data Supply Inc.

USA . 584 parts In-Stock

1+ parts

$1.470

100+ parts

-

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584

$1.470

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Perfect Parts

USA . 259,269 parts In-Stock

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259,269

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RC Electronics

USA . 57,887 parts In-Stock

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57,887

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ChipstoGo Electronic ltd

UK . 27,000 parts In-Stock

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Epart123

USA . 12,000 parts In-Stock

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$8.800

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$8.800

12,000

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$8.800

$8.800

S.R.D Solutions

India . 12,000 parts In-Stock

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Lixinc

USA . 10,225 parts In-Stock

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SupplyDigital Components

Austria . 6,288 parts In-Stock

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6,288

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Kulean Microsystems

USA . 5,389 parts In-Stock

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5,389

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Continental Prestige Electronics

USA . 4,780 parts In-Stock

1+ parts

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100+ parts

$0.288

1k+ parts

$0.174

10k+ parts

$0.153

4,780

-

$0.288

$0.174

$0.153

TANS Electronics

Latvia . 3,485 parts In-Stock

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3,485

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Kepictronics

USA . 3,190 parts In-Stock

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3,190

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Problanco Electronics

Mexico . 1,335 parts In-Stock

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1,335

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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357

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Overview

Enhance your electronic designs with the NTGD3148NT1G by Onsemi. This Small Signal Field Effect Transistor offers superior quality and reliability, backed by Onsemi's reputation for excellence in semiconductor manufacturing. Ideal for switching applications, this N-CHANNEL FET features a compact package design and built-in diode for added convenience. With a maximum drain current of 3A and low on-resistance, this transistor delivers exceptional performance and efficiency. Upgrade your projects with the NTGD3148NT1G and experience the value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of electrons, making it suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers flexibility in circuit design and includes a built-in diode for added functionality.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response and low power consumption.

Surface Mount: YES

Enables easy installation on circuit boards, saving space and providing a clean aesthetic.

Minimum DS Breakdown Voltage: 20 V

Offers reliable performance under various voltage conditions.

Package Shape: RECTANGULAR

Simplifies the mounting process and allows for efficient use of space.

Terminal Form: GULL WING

Facilitates easy soldering and connectivity within the circuit.

Operating Mode: ENHANCEMENT MODE

Provides enhanced control over the transistor's conductivity, improving efficiency.

No. of Elements: 2

Includes multiple elements for increased functionality and versatility in circuit design.

Maximum Drain Current (Abs) (ID): 3 A

Capable of handling high current loads, making it suitable for various applications.

No. of Terminals: 6

Provides multiple connection points for enhanced circuit design options.

Maximum Power Dissipation (Abs): 1.1 W

Efficiently dissipates heat to prevent overheating and ensure reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving installation in electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high switching speeds and low power consumption for efficient performance.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature conditions, ensuring reliability.

Transistor Element Material: SILICON

Provides stability and reliability in performance for long-term use.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures strong solder connections and resistance to corrosion for durability.

Maximum Drain-Source On Resistance: 0.07 ohm

Low resistance allows for efficient current flow and minimal power loss.

Terminal Position: DUAL

Provides multiple terminal positions for versatile circuit connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGD3148NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGD3148NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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