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NTGD3149CT1G

Onsemi

NTGD3149CT1G by Onsemi

NTGD3149CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 2.4A max drain current, and 0.06 ohm on-resistance. Ideal for surface mount designs requiring high performance in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,674 parts In-Stock

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Digiode

USA . 1,255 parts In-Stock

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J2 Sourcing AB

Sweden . 444 parts In-Stock

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AZTECH Wire

Italy . 1,098 parts In-Stock

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$19.590

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Component Stockers USA

USA . 293 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 15,868 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 8,087 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,875 parts In-Stock

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Kulean Microsystems

USA . 2,539 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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SupplyDigital Components

Austria . 1,352 parts In-Stock

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TANS Electronics

Latvia . 937 parts In-Stock

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UHIMA Technologies

Türkiye . 771 parts In-Stock

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Kepictronics

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Futuretech Components

Singapore . 509 parts In-Stock

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Corphita

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Corohmni

South Africa . 392 parts In-Stock

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Overview

Upgrade your electronic devices with the NTGD3149CT1G by Onsemi. This high-quality Small Signal Field Effect Transistor (FET) offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted industry leader, this N-CHANNEL AND P-CHANNEL transistor is perfect for switching applications. With its built-in diode and low on-resistance, you can trust that your devices will operate efficiently and effectively. Invest in the best with the NTGD3149CT1G and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile applications and compatibility with various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode simplifies circuitry and enhances efficiency in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling current flow.

Surface Mount: YES

The surface mount feature allows for easy and secure PCB mounting, making installation and assembly convenient.

Minimum DS Breakdown Voltage: 20 V

The 20V breakdown voltage provides a safety margin and protection against voltage spikes, ensuring the longevity of the transistor.

Package Shape: SQUARE

The square package shape is space-efficient and allows for easy integration into compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection, ensuring reliable electrical contact.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enhances switching speed and efficiency, making it ideal for high-performance applications.

No. of Elements: 2

Having 2 elements allows for increased functionality and versatility in circuit design.

No. of Terminals: 6

The 6 terminals provide multiple connection points for flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is compatible with modern electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high performance and reliability in signal amplification and switching applications.

Transistor Element Material: SILICON

Silicon material ensures high conductivity and temperature tolerance, making the transistor suitable for a wide range of operating conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish provides corrosion resistance and ensures stable electrical connections for long-term durability.

Maximum Drain Current (ID): 2.4 A

With a maximum drain current of 2.4A, this transistor can handle high power loads effectively.

Maximum Drain-Source On Resistance: 0.06 ohm

The low drain-source on resistance of 0.06 ohms minimizes power loss and enhances efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and compatibility with different circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTGD3149CT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTGD3149CT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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