Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTJD4401NT1
Onsemi
NTJD4401NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 20V DS Breakdown Voltage, 0.63A Drain Current, and 0.375ohm On Resistance. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
.63 A
.375 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
R-PDSO-G6
e0
2
6
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
.55 W
Not Qualified
FET General Purpose Power
YES
Tin/Lead (Sn/Pb)
GULL WING
DUAL
SWITCHING
SILICON
NTMS4503NR2
NTMS4503NR2 by Onsemi is a N-CHANNEL FET with 28V DS breakdown voltage and 9A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, this MOSFET has an operating temperature of up to 150 °C.
SINGLE WITH BUILT-IN DIODE
28 V
9 A
.008 ohm
R-PDSO-G8
1
8
2.5 W
Tin/Lead (Sn80Pb20)
NOT SPECIFIED
NTJD4001NT1
NTJD4001NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 30V DS Breakdown Voltage, 0.25A Drain Current, and 2.5 ohm On Resistance. Operating at up to 150 °C, it has a small outline package style suitable for surface mount assembly.
30 V
.25 A
2.5 ohm
12 pF
.272 W
NTS4001NT1
NTS4001NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, ideal for switching applications. With a min DS breakdown voltage of 30V, it operates in enhancement mode with max drain current of 0.27A and max power dissipation of 0.33W at 150 °C.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.27 A
2 ohm
R-PDSO-G3
3
.33 W
TIN LEAD
NTHD4401PT1G
NTHD4401PT1G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 2.1A max drain current, and 0.155 ohm max on resistance. Operates in enhancement mode with a max temp of 150 °C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
2.1 A
.155 ohm
50 pF
R-XDSO-C8
e3
UNSPECIFIED
260
P-CHANNEL
1.1 W
Other Transistors
TIN
C BEND
30
NTHD4401PT1
NTHD4401PT1 by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 2.1A, Breakdown Voltage of 20V, and Operating Temp up to 150 °C. Its small outline package makes it suitable for surface mount designs.
NTJD2152PT1G
NTJD2152PT1G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 8V DS Breakdown Voltage, 0.775A Drain Current, and 0.3 ohm On Resistance. It operates in ENHANCEMENT MODE with a max temp of 150 °C.
8 V
.775 A
.3 ohm
40 pF
NTJD2152PT1
NTJD2152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It has a max drain current of 0.775A and on-resistance of 0.3 ohm. Ideal for switching applications in small outline packages, operating at up to 150 °C.
NTTD4401FR2
NTTD4401FR2 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 2.4A drain current, and 0.09 ohm on-resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode up to 150 °C.
LOGIC LEVEL COMPATIBLE
2.4 A
.09 ohm
175 pF
1.42 W
NTHD4N02FT1G
NTHD4N02FT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 2.7A Drain Current, and 0.08ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Operates at up to 125 °C with a peak reflow temperature of 260°C in small outline package style.
2.7 A
2.9 A
.08 ohm
125 Cel
.91 W
NTLJD3182FZTAG
NTLJD3182FZTAG by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 2.2A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.144 ohm max on-resistance and matte tin terminal finish.
DRAIN
2.2 A
.144 ohm
S-PDSO-N6
SQUARE
MATTE TIN
NO LEAD
NTLUF4189NZTAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Case Connection: DRAIN; Maximum Operating Temperature: 150 Cel;
1.5 A
1.2 A
.2 ohm
1.3 W
NTLUF4189NZTBG
NTLUF4189NZTBG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 1.2A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style. Operating in ENHANCEMENT MODE, this MOSFET has 0.2 ohm RDS(ON) for efficient performance.
NTLUS3192PZTAG
NTLUS3192PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A ID. Ideal for SWITCHING applications, it features 0.085 ohm RDS(ON) and ENHANCEMENT MODE operation in a SMALL OUTLINE package.
.085 ohm
S-PDSO-N3
NTTFS4824NTAG
NTTFS4824NTAG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 69A max drain current. Ideal for switching applications, it features a built-in diode, 0.0075 ohm max on resistance, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 46.3W at 150°C.
69 A
8.3 A
.0075 ohm
255 pF
S-PDSO-F5
5
46.3 W
FET General Purpose Powers
FLAT
NTTFS4824NTWG
NTTFS4824NTWG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 69A max drain current. Ideal for switching applications, it features a built-in diode, 0.0075 ohm max on resistance, and operates in enhancement mode. Suitable for surface mount assembly with a small outline package style.
NTLJD3181PZTAG
NTLJD3181PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 20V DS Breakdown Voltage, 3.2A ID, and 0.1 ohm RDS(on). This METAL-OXIDE SEMICONDUCTOR FET comes in a SQUARE package with NO LEAD terminals, suitable for ENHANCEMENT MODE operation in various electronic circuits.
3.2 A
.1 ohm
NTLUD3191PZTBG
NTLUD3191PZTBG by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 1.1A, and Drain-Source On Resistance of 0.25 ohm. This small outline transistor in PLASTIC/EPOXY package is designed for surface mount with DUAL terminals.
1.1 A
.25 ohm
BS170G
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
60 V
.5 A
5 ohm
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.35 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
40
MMBF170LT3G
MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
TO-236AB
-55 Cel
.225 W
Tin (Sn)
NTJD4105CT2
NTJD4105CT2 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 1.1A, on-resistance of 0.375 ohm & operates at up to 150°C. With a package style of small outline & Gull Wing terminals, it's designed for surface mount technology.
N-CHANNEL AND P-CHANNEL
NTJD4105CT4G
NTJD4105CT4G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 1.1A max drain current, 0.375 ohm RDS(on), and 150°C max temp making it ideal for various electronic circuits.
2N7000RLRAG
2N7000RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in Enhancement Mode applications, featuring a built-in diode and 5ohm Drain-Source Resistance for efficient performance.
.2 A
TO-92
2N7000RLRMG
2N7000RLRMG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for applications requiring Enhancement Mode operation, it features a built-in diode and 5ohm On Resistance. Package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
2N7000RLRPG
2N7000RLRPG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in applications requiring Enhancement Mode operation, such as low-power switching circuits. With a max power dissipation of 0.35W and operating temperature up to 150 °C, it offers reliable performance in various electronic designs.
NTMS4404NR2
NTMS4404NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 9.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.0115 ohm. This small outline transistor can handle up to 2.5W power dissipation at 150 °C max temperature.
9.6 A
7 A
.0115 ohm
300 pF
NTJD2152PT2G
NTJD2152PT2G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It is used for switching applications in enhancement mode. With a max drain current of 1.1A and breakdown voltage of 8V, it operates at up to 150 °C.
NTR4502PT1
NTR4502PT1 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has GULL WING terminals and can withstand up to 150°C operating temperature.
1.95 A
.4 W
NTR4502PT3
NTR4502PT3 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has a peak reflow temp of 235 °C and is surface mountable.
NTR4503NT1
NTR4503NT1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.5A Drain Current, 0.11 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
.11 ohm
25 pF
.73 W
NUD3048MT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; No. of Elements: 1; Terminal Position: DUAL;
100 V
.82 ohm
1.56 W
NTJD4152PT1
NTJD4152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.88A max drain current, and 0.26 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150 °C.
.88 A
.26 ohm
NTJD4401NT2G
NTJD4401NT2G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 0.63A max drain current, 0.375 ohm max on resistance, and 20V min breakdown voltage. Ideal for small outline packages requiring high power dissipation up to 0.55W at 150 °C.
NTJD4401NT4G
NTJD4401NT4G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. It has a max drain current of 0.63A, on-resistance of 0.375 ohm, and breakdown voltage of 20V. This small outline transistor operates in enhancement mode at up to 150 °C.
NTJD4401NT4
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
NTJS4405NT1
NTJS4405NT1 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, 0.35 ohm max RDS(on), and 1A max ID. Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals. Operating in enhancement mode, it has 12pF Crss and withstands peak reflow temp of 235 °C.
25 V
1 A
.35 ohm
NTJS4405NT4G
NTJS4405NT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE and 0.35 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has 6 terminals, operates in ENHANCEMENT MODE, and offers a max Drain Current of 1A.
NTHS4501NT1
NTHS4501NT1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.038 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features SINGLE configuration with built-in diode in a RECTANGULAR package suitable for surface mount assembly.
4.9 A
.038 ohm
NTF3055-100T3G
NTF3055-100T3G by Onsemi is a small signal FET with N-channel polarity. It features a max drain current of 3A, operating in enhancement mode for switching applications. With a package style of small outline and Gull Wing terminals, it offers a max power dissipation of 2.1W at an operating temperature of 175°C.
74 mJ
3 A
155 pF
TO-261AA
R-PDSO-G4
4
175 Cel
2.1 W
2N5460G
2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.
SINGLE
JUNCTION
2 pF
DEPLETION MODE
135 Cel
FET General Purpose Small Signal
AMPLIFIER
NTGS4111PT1
NTGS4111PT1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.06 ohm On Resistance and GULL WING terminals for surface mount assembly.
3.7 A
.06 ohm
.63 W
NTHS4111PT1G
NTHS4111PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.045 ohm RDS(on), and 3.3A ID. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
3.3 A
.045 ohm
R-PDSO-C8
NTJS4151PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 235; Package Shape: RECTANGULAR;
BSS123LT3G
BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
.17 A
6 ohm
TO-236
MGSF1N02ELT1G
MGSF1N02ELT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
.75 A
Matte Tin (Sn)
MGSF1N03LT3G
MGSF1N03LT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. It is ideal for SWITCHING applications, featuring a max Drain Current of 1.6A and 0.1 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
1.6 A
.42 W
MMBF2202PT1G
MMBF2202PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 0.3A drain current, and 2.2 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150 °C. Package style is small outline with GULL WING terminals for surface mount assembly.
.3 A
2.2 ohm
.15 W
MMFT2955ET1G
MMFT2955ET1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.3 ohm max drain-source resistance. Operating in enhancement mode, it has a max drain current of 1.2A and can handle up to 0.8W power dissipation at 150 °C.
AVALANCHE RATED
.8 W
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