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NTLJD3182FZTAG

Onsemi

NTLJD3182FZTAG by Onsemi

NTLJD3182FZTAG by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 2.2A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.144 ohm max on-resistance and matte tin terminal finish.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

33,000

-

$0.238

$0.197

$0.176

DigiKey

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

33,000

-

-

-

$0.300

Verical

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

33,000

-

-

-

$0.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 295 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

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295

$0.185

-

-

-

Chip Stock

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

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25,000

-

-

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Vyrian

USA . 8,284 parts In-Stock

1+ parts

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8,284

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,329 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

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1,329

$0.176

-

-

-

Corohmni

South Africa . 383 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

10k+ parts

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383

$0.195

-

-

-

AZTECH Wire

Italy . 585 parts In-Stock

1+ parts

$11.930

100+ parts

-

1k+ parts

-

10k+ parts

-

585

$11.930

-

-

-

Continental Prestige Electronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.179

10k+ parts

-

33,000

-

-

$0.179

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QUARKTWIN TECHNOLOGY LTD

USA . 9,492 parts In-Stock

1+ parts

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100+ parts

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9,492

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Kulean Microsystems

USA . 7,275 parts In-Stock

1+ parts

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7,275

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Problanco Electronics

Mexico . 3,149 parts In-Stock

1+ parts

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100+ parts

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3,149

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TANS Electronics

Latvia . 766 parts In-Stock

1+ parts

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766

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UHIMA Technologies

Türkiye . 409 parts In-Stock

1+ parts

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409

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SupplyDigital Components

Austria . 80 parts In-Stock

1+ parts

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80

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Overview

Unleash the power of innovation with the NTLJD3182FZTAG by Onsemi! Designed to meet the highest standards of quality, this P-CHANNEL Small Signal Field Effect Transistor (FET) is perfect for a wide range of switching applications. With its cutting-edge technology and reliable performance, this product offers unmatched value and benefits to customers. Say goodbye to compromise and hello to efficiency with Onsemi's NTLJD3182FZTAG!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance and high input impedance, making this transistor efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse polarity protection and simplifies circuit designs, enhancing the overall reliability of the application.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

Being surface mountable, this transistor is easy to install and saves space on the PCB, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can withstand higher voltage levels, ensuring reliable operation in a variety of circuits.

Package Shape: SQUARE

The square package shape allows for easy placement on the circuit board and efficient use of space, making it suitable for compact designs.

Terminal Form: NO LEAD

The absence of leads simplifies the installation process and reduces the risk of solder joint failures, enhancing the overall reliability of the transistor.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control of the transistor's conductivity, making it suitable for various applications that require precise switching.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit design and allows for various connection configurations to meet specific application requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting, making it suitable for applications where board space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance and low power consumption, making this transistor energy efficient and suitable for battery-powered devices.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and temperature stability, ensuring consistent performance over a wide range of operating conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides a durable and corrosion-resistant coating for the terminals, ensuring reliable electrical connections in various environmental conditions.

Maximum Drain Current (ID): 2.2 A

With a maximum drain current of 2.2A, this transistor can handle high current loads, making it suitable for applications that require switching high-power devices.

Maximum Drain-Source On Resistance: 0.144 ohm

The low drain-source on resistance of 0.144 ohm reduces power dissipation and improves efficiency, making this transistor ideal for high-frequency switching applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and enables various connection options, allowing for versatile applications.

Case Connection: DRAIN

The drain case connection simplifies the installation process and provides a secure electrical connection, ensuring reliable operation in demanding environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJD3182FZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.144 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJD3182FZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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