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NTLJD3183CZTAG

Onsemi

NTLJD3183CZTAG by Onsemi

NTLJD3183CZTAG by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 2.6A max drain current, and 0.086 ohm on-resistance. Ideal for surface mount designs requiring high performance in a compact square package.

Median Price

$0.232

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,165 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

12,165

-

$0.251

$0.208

$0.186

DigiKey

USA . 12,165 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.210

12,165

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-

-

$0.210

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.232

12,000

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-

-

$0.232

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 672 parts In-Stock

1+ parts

$0.196

100+ parts

-

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672

$0.196

-

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Vyrian

USA . 1,032 parts In-Stock

1+ parts

$0.206

100+ parts

-

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1,032

$0.206

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,225 parts In-Stock

1+ parts

$0.185

100+ parts

-

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2,225

$0.185

-

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Corohmni

South Africa . 254 parts In-Stock

1+ parts

$0.206

100+ parts

-

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254

$0.206

-

-

-

Component Stockers USA

USA . 9,113 parts In-Stock

1+ parts

$0.210

100+ parts

$0.200

1k+ parts

$0.180

10k+ parts

$0.180

9,113

$0.210

$0.200

$0.180

$0.180

Continental Prestige Electronics

USA . 12,165 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.189

10k+ parts

-

12,165

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-

$0.189

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SupplyDigital Components

Austria . 6,825 parts In-Stock

1+ parts

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6,825

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TANS Electronics

Latvia . 4,611 parts In-Stock

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4,611

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Problanco Electronics

Mexico . 2,574 parts In-Stock

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2,574

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Kulean Microsystems

USA . 908 parts In-Stock

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908

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UHIMA Technologies

Türkiye . 380 parts In-Stock

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380

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Perfect Parts

USA . 186 parts In-Stock

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186

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Overview

Enhance your electronics projects with the high-quality NTLJD3183CZTAG Small Signal Field Effect Transistor from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient components for various applications like switching. This FET offers enhanced performance with its separate N-channel and P-channel configuration, built-in diode, and low on-resistance. With its compact square package and no-lead terminals, this transistor is perfect for surface mount applications. Trust Onsemi to provide you with top-notch products that bring value and innovation to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating environments.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for more efficient switching and control, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and responsive operation.

Surface Mount: YES

Facilitates easy and space-saving installation on circuit boards, ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

Ensures safe operation and protects the transistor against voltage spikes.

Package Shape: SQUARE

Provides a compact form factor for efficient use of space in circuit design.

Terminal Form: NO LEAD

Simplifies soldering and connection processes, making installation easier and more convenient.

Operating Mode: ENHANCEMENT MODE

Optimizes performance for various applications by operating in enhancement mode.

No. of Elements: 2

Offers dual functionality in a single package, providing versatility in circuit designs.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit layout and connection options.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving and efficient use in electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced technology for reliable and efficient performance in various applications.

Transistor Element Material: SILICON

High-quality material for enhanced durability and performance in different operating conditions.

Terminal Finish: TIN

Provides corrosion resistance and ensures reliable electrical connections.

Maximum Drain Current (ID): 2.6 A

Capable of handling high current loads, suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 0.086 ohm

Low on-resistance for efficient power handling and reduced heat dissipation.

Terminal Position: DUAL

Dual terminal positioning for versatile connection options in circuit designs.

Case Connection: DRAIN

Specific terminal connection for easy integration into circuit designs requiring drain connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJD3183CZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

.086 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJD3183CZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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