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NTLJD3183CZTBG

Onsemi

NTLJD3183CZTBG by Onsemi

NTLJD3183CZTBG by Onsemi is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode, suitable for SWITCHING applications. With a Max ID of 2.6A and 0.086 ohm RDS(on), it operates in ENHANCEMENT MODE for various electronic circuits.

Median Price

$0.229

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 75,062 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

75,062

-

$0.238

$0.197

$0.176

Avnet

USA . 75,062 parts In-Stock

1+ parts

-

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$0.210

10k+ parts

$0.190

75,062

-

-

$0.210

$0.190

DigiKey

USA . 75,062 parts In-Stock

1+ parts

-

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$0.300

75,062

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$0.300

Verical

USA . 75,062 parts In-Stock

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$0.220

75,062

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$0.220

Distributors (In-Stock)

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Digiode

USA . 419 parts In-Stock

1+ parts

$0.185

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419

$0.185

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Vyrian

USA . 628 parts In-Stock

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$0.195

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628

$0.195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 186 parts In-Stock

1+ parts

$0.176

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-

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186

$0.176

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.195

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72

$0.195

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Continental Prestige Electronics

USA . 75,062 parts In-Stock

1+ parts

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100+ parts

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$0.190

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75,062

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$0.190

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Problanco Electronics

Mexico . 4,330 parts In-Stock

1+ parts

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4,330

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TANS Electronics

Latvia . 2,927 parts In-Stock

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2,927

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SupplyDigital Components

Austria . 2,453 parts In-Stock

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2,453

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Kulean Microsystems

USA . 912 parts In-Stock

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UHIMA Technologies

Türkiye . 160 parts In-Stock

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160

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Overview

Upgrade your electronics with the high-quality NTLJD3183CZTBG by Onsemi. This small signal field effect transistor (FET) offers exceptional performance and reliability, making it ideal for a variety of switching applications. With its separate configuration and built-in diode, this transistor provides added convenience and efficiency. Trust in Onsemi's reputation for excellence in semiconductor technology to deliver a product that exceeds expectations. Experience the value and benefits of the NTLJD3183CZTBG for yourself and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options increases the versatility and flexibility of the transistor for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode allows for easy integration into circuits and provides additional functionality.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, making it suitable for a variety of applications.

Package Shape: SQUARE

The square package shape allows for easy placement and mounting on circuit boards, optimizing space usage.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation provides improved control over the transistor's behavior, allowing for precise switching operations.

Case Connection: DRAIN

The drain connection type simplifies the circuit design and enhances the efficiency of the transistor's performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJD3183CZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

.086 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJD3183CZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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