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NTLJS1102PTAG

Onsemi

NTLJS1102PTAG by Onsemi

NTLJS1102PTAG by Onsemi is a P-CHANNEL FET with 6.2A ID, 0.036 ohm RDS(on), and 3.3W power dissipation. Ideal for switching applications, it operates in the -55 to 150 °C range with a peak reflow temp of 260 °C.

Median Price

$0.269

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,353 parts In-Stock

1+ parts

$1.050

100+ parts

$0.383

1k+ parts

$0.329

10k+ parts

-

2,353

$1.050

$0.383

$0.329

-

Rochester

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

36,000

-

$0.238

$0.197

$0.176

DigiKey

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

36,000

-

-

-

$0.300

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

36,000

-

-

-

$0.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 793 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

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793

$0.185

-

-

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Vyrian

USA . 2,122 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

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2,122

$0.195

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-

-

Chip Stock

USA . 53,000 parts In-Stock

1+ parts

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53,000

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 89 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$0.176

-

-

-

Corohmni

South Africa . 360 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

10k+ parts

-

360

$0.195

-

-

-

Component Stockers USA

USA . 43,681 parts In-Stock

1+ parts

$0.200

100+ parts

$0.190

1k+ parts

$0.170

10k+ parts

$0.170

43,681

$0.200

$0.190

$0.170

$0.170

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.643

100+ parts

$0.585

1k+ parts

$0.527

10k+ parts

-

150

$0.643

$0.585

$0.527

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Continental Prestige Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.179

10k+ parts

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36,000

-

-

$0.179

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Perfect Parts

USA . 16,138 parts In-Stock

1+ parts

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16,138

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Problanco Electronics

Mexico . 8,097 parts In-Stock

1+ parts

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8,097

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Kulean Microsystems

USA . 7,365 parts In-Stock

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7,365

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TANS Electronics

Latvia . 7,249 parts In-Stock

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7,249

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SupplyDigital Components

Austria . 6,597 parts In-Stock

1+ parts

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6,597

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UHIMA Technologies

Türkiye . 349 parts In-Stock

1+ parts

-

100+ parts

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349

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Overview

Enhance your electronic projects with the NTLJS1102PTAG by Onsemi, a high-quality P-Channel Field Effect Transistor ideal for switching applications. Manufactured by Onsemi, this transistor offers reliability and performance you can trust. With a maximum drain current of 6.2 A and a minimum DS breakdown voltage of 8 V, this small outline transistor provides exceptional power dissipation and temperature range. Whether you're a hobbyist or a professional, the NTLJS1102PTAG delivers the value and efficiency you need for your next project. Upgrade your circuits today with this versatile and dependable component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and electrical insulation, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring a negative voltage bias, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, reducing component count and board space requirements.

Transistor Application: SWITCHING

Ideal for fast switching applications, delivering efficient performance and minimizing power losses.

Surface Mount: YES

Easily mountable on PCBs, facilitating automated assembly processes and enhancing overall product reliability.

Minimum DS Breakdown Voltage: 8 V

Offers a high breakdown voltage, ensuring robust operation and protection against voltage spikes.

Package Shape: SQUARE

Provides a compact form factor, enabling space-efficient circuit layouts and design flexibility.

Terminal Form: NO LEAD

Eliminates the need for traditional lead terminals, enhancing thermal performance and reliability.

Operating Mode: ENHANCEMENT MODE

Enables simple circuit control and efficient operation, enhancing overall system performance.

Maximum Drain Current (Abs) (ID): 6.2 A

Capable of handling high current loads, making it suitable for demanding applications.

No. of Terminals: 6

Provides multiple connection points, enabling versatile circuit configurations and design options.

Maximum Power Dissipation (Abs): 3.3 W

Supports a high power dissipation capacity, ensuring reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Compact package design, reducing board space requirements and enabling high-density circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, ensuring reliability under challenging conditions.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, ensuring consistent performance over time.

Minimum Operating Temperature: -55 °C

Capable of operating in low-temperature environments, suitable for a wide range of applications.

Terminal Finish: TIN

Provides corrosion resistance and reliable electrical connections, ensuring long-term performance.

Maximum Drain Current (ID): 3.7 A

High drain current rating, suitable for applications requiring high current handling capabilities.

Maximum Drain-Source On Resistance: 0.036 ohm

Low on-resistance, minimizing power losses and improving efficiency in switching applications.

Terminal Position: DUAL

Dual terminal configuration, offering flexibility in circuit design and connection options.

Case Connection: DRAIN

Drain connection for easy integration into circuits, enabling efficient current flow and control.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures, ensuring reliable soldering during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJS1102PTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

6.2 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJS1102PTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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