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NTLJS3180PZTAG

Onsemi

NTLJS3180PZTAG by Onsemi

NTLJS3180PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.5A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, this MOSFET has 0.05 ohm RDS(ON) and DUAL terminal position for efficient performance.

Median Price

$0.247

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

9,000

-

$0.238

$0.197

$0.176

DigiKey

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

9,000

-

-

-

$0.300

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

9,000

-

-

-

$0.247

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,294 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,294

$0.185

-

-

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Vyrian

USA . 1,148 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

10k+ parts

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1,148

$0.195

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,055 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

-

2,055

$0.176

-

-

-

Corohmni

South Africa . 158 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

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10k+ parts

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158

$0.195

-

-

-

Andel Nordic

Denmark . 1,614 parts In-Stock

1+ parts

$0.790

100+ parts

-

1k+ parts

$0.551

10k+ parts

$0.551

1,614

$0.790

-

$0.551

$0.551

Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.179

10k+ parts

-

9,000

-

-

$0.179

-

Kulean Microsystems

USA . 7,096 parts In-Stock

1+ parts

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100+ parts

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7,096

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SupplyDigital Components

Austria . 5,191 parts In-Stock

1+ parts

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5,191

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Problanco Electronics

Mexico . 1,792 parts In-Stock

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1,792

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Perfect Parts

USA . 1,120 parts In-Stock

1+ parts

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1,120

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UHIMA Technologies

Türkiye . 875 parts In-Stock

1+ parts

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875

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TANS Electronics

Latvia . 780 parts In-Stock

1+ parts

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780

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Overview

Upgrade your electronic devices with the NTLJS3180PZTAG by Onsemi, a high-quality P-channel small signal field-effect transistor perfect for switching applications. This product boasts a single configuration with a built-in diode for enhanced performance and reliability. With a maximum drain current of 3.5A and a low drain-source on resistance of 0.05 ohm, this transistor ensures seamless operation. Trust Onsemi's expertise in semiconductor technology to deliver top-notch products that meet your needs. Don't settle for less when you can have the best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, reducing component count and overall cost.

Transistor Application: SWITCHING

Ideal for applications where rapid switching between on and off states is required.

Surface Mount: YES

Enables easy and efficient PCB assembly in a surface mount technology (SMT) process.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating range for the transistor to prevent damage from excessive voltage.

Package Shape: SQUARE

Facilitates easy placement and orientation on the PCB for optimal circuit layout.

Terminal Form: NO LEAD

Reduces the risk of solder joints breaking, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the transistor through gate voltage, enhancing circuit performance.

No. of Terminals: 6

Provides multiple connection points for versatile circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for high-density mounting of components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and reliability in amplification and switching applications.

Transistor Element Material: SILICON

Provides high performance and durability for various electronic circuits.

Terminal Finish: TIN

Ensures good electrical conductivity and corrosion resistance for stable connections.

Maximum Drain Current (ID): 3.5 A

Allows for handling high current loads while maintaining efficient operation.

Maximum Drain-Source On Resistance: 0.05 ohm

Reduces power loss and heat generation, leading to improved overall efficiency.

Terminal Position: DUAL

Provides flexibility in circuit design and connection options for various applications.

Case Connection: DRAIN

Facilitates easy mounting and connection to external circuitry, enhancing overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJS3180PZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJS3180PZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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