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NTLJS3A18PZTWG

Onsemi

NTLJS3A18PZTWG by Onsemi

NTLJS3A18PZTWG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 1.8W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic devices requiring high-performance transistors.

Median Price

$0.423

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.351

10k+ parts

$0.313

6,000

-

$0.423

$0.351

$0.313

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.360

10k+ parts

$0.360

6,000

-

-

$0.360

$0.360

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.439

10k+ parts

$0.391

6,000

-

-

$0.439

$0.391

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 693 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

-

693

$0.330

-

-

-

Vyrian

USA . 1,531 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

-

10k+ parts

-

1,531

$0.347

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 912 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

912

$0.312

-

-

-

Corohmni

South Africa . 60 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$0.347

-

-

-

Kepictronics

USA . 45,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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45,850

-

-

-

-

TANS Electronics

Latvia . 7,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,841

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,194 parts In-Stock

1+ parts

-

100+ parts

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6,194

-

-

-

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.318

10k+ parts

-

6,000

-

-

$0.318

-

SupplyDigital Components

Austria . 3,701 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,701

-

-

-

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Kulean Microsystems

USA . 2,292 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,292

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-

-

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UHIMA Technologies

Türkiye . 396 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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396

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-

-

-

Problanco Electronics

Mexico . 172 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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172

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-

Overview

Discover the NTLJS3A18PZTWG by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this surface mount transistor is perfect for a wide range of applications. With a maximum drain current of 8.2 A and maximum power dissipation of 1.8 W, this transistor delivers exceptional value and benefits to customers looking for high-quality electronic components. Upgrade your projects with the NTLJS3A18PZTWG and experience superior performance like never before.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel FETs are known for low on-resistance and high input impedance, making them suitable for low power applications.

Configuration: SINGLE

Single configuration FETs are easier to use and integrate into circuits compared to dual or parallel configurations.

Surface Mount: YES

Surface mount packaging allows for easier and more compact PCB layout designs.

Maximum Drain Current (Abs) (ID): 8.2 A

High maximum drain current allows for handling of higher current loads in applications.

Maximum Power Dissipation (Abs): 1.8 W

Good power dissipation capability ensures the transistor can handle heat and operate efficiently.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers good performance characteristics and reliability.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a variety of environments without performance degradation.

Terminal Finish: TIN

Tin terminal finish provides good solderability and resistance to oxidation.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the component during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures compatibility with lead-free soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJS3A18PZTWG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8.2 A

Maximum Drain Current (ID):

8.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLJS3A18PZTWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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