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NTLJS2103PTAG

Onsemi

NTLJS2103PTAG by Onsemi

NTLJS2103PTAG by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.9A, 0.04 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 3.3W and can withstand temperatures from -55 to 150 °C.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 74,138 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

74,138

-

$0.343

$0.285

$0.254

DigiKey

USA . 74,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

74,138

-

-

$0.430

-

Verical

USA . 55,476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.386

10k+ parts

$0.318

55,476

-

-

$0.386

$0.318

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,810 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

-

10k+ parts

-

1,810

$0.268

-

-

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Vyrian

USA . 879 parts In-Stock

1+ parts

$0.282

100+ parts

-

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879

$0.282

-

-

-

Chip Stock

USA . 43,000 parts In-Stock

1+ parts

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43,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 105 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

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105

$0.254

-

-

-

Corohmni

South Africa . 187 parts In-Stock

1+ parts

$0.282

100+ parts

-

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187

$0.282

-

-

-

Continental Prestige Electronics

USA . 74,162 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.258

10k+ parts

-

74,162

-

-

$0.258

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Kepictronics

USA . 33,612 parts In-Stock

1+ parts

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33,612

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Kulean Microsystems

USA . 6,314 parts In-Stock

1+ parts

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6,314

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TANS Electronics

Latvia . 5,988 parts In-Stock

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5,988

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Problanco Electronics

Mexico . 5,285 parts In-Stock

1+ parts

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5,285

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SupplyDigital Components

Austria . 3,103 parts In-Stock

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3,103

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A-Z Elektronik GmbH

Germany . 1,883 parts In-Stock

1+ parts

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1,883

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UHIMA Technologies

Türkiye . 869 parts In-Stock

1+ parts

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869

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RC Electronics

USA . 500 parts In-Stock

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500

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Overview

Unleash the power of technology with the NTLJS2103PTAG by Onsemi, a high-quality P-channel small signal FET that brings unparalleled performance and reliability to switching applications. With a built-in diode and enhancement mode operation, this transistor offers seamless functionality and efficiency. Whether you're designing cutting-edge electronics or upgrading existing systems, this product's superior design and robust construction ensure optimum performance. Trust Onsemi's expertise in semiconductor technology to deliver the best-in-class components for your projects. Experience the difference with the NTLJS2103PTAG - the smart choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are often used in applications where the load is connected to the positive supply voltage, making this transistor suitable for a wide range of switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse current flow, making this transistor convenient and reliable for switching purposes.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient on/off transitions, making it ideal for controlling circuits.

Maximum Drain Current (Abs) (ID): 5.9 A

With a high maximum drain current rating, this transistor can handle heavy loads without overheating, ensuring reliable performance in demanding conditions.

Maximum Power Dissipation (Abs): 3.3 W

The high power dissipation rating of this transistor allows it to efficiently handle heat generated during operation, maintaining stable performance over long periods.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function in a wide range of environments, making it versatile and suitable for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLJS2103PTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

5.9 A

Maximum Drain Current (ID):

5.9 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLJS2103PTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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