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NTLUF4189NZTBG

Onsemi

NTLUF4189NZTBG by Onsemi

NTLUF4189NZTBG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 1.2A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style. Operating in ENHANCEMENT MODE, this MOSFET has 0.2 ohm RDS(ON) for efficient performance.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 302,750 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

302,750

-

$0.251

$0.208

$0.186

Verical

USA . 302,750 parts In-Stock

1+ parts

-

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$0.232

302,750

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-

-

$0.232

Distributors (In-Stock)

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Digiode

USA . 817 parts In-Stock

1+ parts

$0.196

100+ parts

-

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817

$0.196

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Vyrian

USA . 4,660 parts In-Stock

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4,660

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Distributors (Availability)

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Corphita

USA . 1,244 parts In-Stock

1+ parts

$0.185

100+ parts

-

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1,244

$0.185

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Corohmni

South Africa . 145 parts In-Stock

1+ parts

$0.206

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145

$0.206

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AZTECH Wire

Italy . 401 parts In-Stock

1+ parts

$11.840

100+ parts

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401

$11.840

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Continental Prestige Electronics

USA . 302,750 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.189

10k+ parts

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302,750

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$0.189

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A-Z Elektronik GmbH

Germany . 6,909 parts In-Stock

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6,909

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SupplyDigital Components

Austria . 3,793 parts In-Stock

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3,793

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Kulean Microsystems

USA . 2,726 parts In-Stock

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2,726

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TANS Electronics

Latvia . 868 parts In-Stock

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868

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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622

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Problanco Electronics

Mexico . 458 parts In-Stock

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458

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Overview

Unlock the power of efficient switching with the NTLUF4189NZTBG by Onsemi. Crafted with precision and expertise, this small signal Field Effect Transistor (FET) offers unparalleled performance in a compact package. Ideal for a variety of applications, this N-CHANNEL transistor with built-in diode is designed to enhance your operations. With a minimum DS breakdown voltage of 30V and maximum drain current of 1.2A, this FET delivers reliable switching capabilities. Experience the value and benefits of quality engineering with Onsemi's innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in one direction, making it suitable for a variety of applications such as switching.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for fast switching applications, ensuring high performance and efficiency.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage, making the transistor suitable for handling higher voltages.

Package Shape: SQUARE

Has a compact shape that optimizes space utilization on circuit boards.

Terminal Form: NO LEAD

Eliminates the need for lead connections, reducing the risk of connection issues and simplifying installation.

Operating Mode: ENHANCEMENT MODE

Offers enhanced control over the transistor's operation, allowing for precise switching capabilities.

No. of Terminals: 6

Provides multiple connection points for versatile integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Features a compact and streamlined design that saves space on a circuit board.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient power management and control in electronic circuits.

Transistor Element Material: SILICON

Ensures reliable and consistent performance over time, making the transistor a durable choice.

Terminal Finish: TIN

Provides a corrosion-resistant finish for the terminals, ensuring long-term reliability and stable connections.

Maximum Drain Current (ID): 1.2 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 0.2 ohm

Offers low on-resistance for efficient power flow and minimal heat generation during operation.

Terminal Position: DUAL

Provides flexibility in circuit design with multiple terminal positions for convenient connectivity.

Case Connection: DRAIN

Features a drain connection for effective heat dissipation, ensuring the transistor remains cool during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUF4189NZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUF4189NZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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