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NTLUD3191PZTAG

Onsemi

NTLUD3191PZTAG by Onsemi

NTLUD3191PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.1A, Max Drain-Source On Resistance of 0.25 ohm, and Min DS Breakdown Voltage of 20V. This small outline transistor in PLASTIC/EPOXY package is surface mountable and operates in ENHANCEMENT MODE.

Median Price

$0.195

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99,480 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

99,480

-

$0.211

$0.175

$0.156

DigiKey

USA . 99,480 parts In-Stock

1+ parts

-

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$0.180

99,480

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$0.180

Verical

USA . 96,480 parts In-Stock

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$0.195

96,480

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$0.195

Distributors (In-Stock)

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Vyrian

USA . 1,970 parts In-Stock

1+ parts

$0.162

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-

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1,970

$0.162

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Digiode

USA . 983 parts In-Stock

1+ parts

$0.164

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983

$0.164

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,270 parts In-Stock

1+ parts

$0.156

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-

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2,270

$0.156

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Corohmni

South Africa . 429 parts In-Stock

1+ parts

$0.162

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429

$0.162

-

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Andel Nordic

Denmark . 266 parts In-Stock

1+ parts

$1.840

100+ parts

-

1k+ parts

$1.286

10k+ parts

$1.286

266

$1.840

-

$1.286

$1.286

Continental Prestige Electronics

USA . 99,480 parts In-Stock

1+ parts

-

100+ parts

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$0.159

10k+ parts

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99,480

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$0.159

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QUARKTWIN TECHNOLOGY LTD

USA . 26,047 parts In-Stock

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26,047

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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TANS Electronics

Latvia . 7,490 parts In-Stock

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7,490

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Problanco Electronics

Mexico . 7,329 parts In-Stock

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7,329

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SupplyDigital Components

Austria . 3,913 parts In-Stock

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3,913

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Kulean Microsystems

USA . 3,837 parts In-Stock

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3,837

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UHIMA Technologies

Türkiye . 457 parts In-Stock

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457

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Overview

Enhance your electronic devices with the NTLUD3191PZTAG by Onsemi, a high-quality P-Channel Small Signal Field Effect Transistor that offers superior performance in switching applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this FET features a compact square package with no lead terminals, making it ideal for surface mount applications. With a minimum DS breakdown voltage of 20V and a maximum drain current of 1.1A, this transistor delivers reliable operation and efficient power management. Upgrade your devices with the NTLUD3191PZTAG for enhanced functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and transport.

Polarity or Channel Type: P-CHANNEL

Offers lower leakage current and higher input impedance compared to N-channel transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Provides versatility for various circuit designs and applications.

Transistor Application: SWITCHING

Suitable for applications where fast switching speeds are required.

Surface Mount: YES

Allows for easy and compact circuit board mounting.

Minimum DS Breakdown Voltage: 20 V

Ensures reliability and stability in operation within specified voltage limits.

Package Shape: SQUARE

Optimal use of space on the circuit board.

Terminal Form: NO LEAD

Eliminates the need for lead-based soldering, making it environmentally friendly.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the transistor's conductivity.

No. of Elements: 2

Provides flexibility in circuit design and functionality.

No. of Terminals: 6

Ensures all necessary connections are available for interfacing with other components.

Package Style (Meter): SMALL OUTLINE

Compact size for applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and efficiency in amplification and switching applications.

Transistor Element Material: SILICON

Reliable and widely used material for transistor manufacturing.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance.

Maximum Drain Current (ID): 1.1 A

Capable of handling high current loads.

Maximum Drain-Source On Resistance: 0.25 ohm

Low resistance for efficient power transfer.

Terminal Position: DUAL

Allows for convenient connection to other components.

Case Connection: DRAIN

Proper grounding and heat dissipation for reliable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUD3191PZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUD3191PZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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