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NTLUS020N03CTAG

Onsemi

NTLUS020N03CTAG by Onsemi

NTLUS020N03CTAG by Onsemi is a small signal FET with N-CHANNEL polarity, ideal for switching applications. It features a 30V DS breakdown voltage, 5.3A max drain current, and 0.018 ohm max on resistance. Operating in enhancement mode, it has a temp range of -55 to 150 °C and comes in a square package style suitable for surface mount assembly.

Median Price

$0.778

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 450 parts In-Stock

1+ parts

$0.585

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.585

-

-

-

Mouser Electronics

USA . 2,604 parts In-Stock

1+ parts

$0.970

100+ parts

$0.392

1k+ parts

$0.279

10k+ parts

$0.235

2,604

$0.970

$0.392

$0.279

$0.235

DigiKey

USA . 829 parts In-Stock

1+ parts

$0.970

100+ parts

$0.392

1k+ parts

$0.273

10k+ parts

$0.208

829

$0.970

$0.392

$0.273

$0.208

Chip1Stop

Japan . 2,390 parts In-Stock

1+ parts

$2.490

100+ parts

$0.677

1k+ parts

$0.469

10k+ parts

-

2,390

$2.490

$0.677

$0.469

-

Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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54,000

-

-

-

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Verical

USA . 1,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.240

1,530

-

-

-

$0.240

Rochester

USA . 1,530 parts In-Stock

1+ parts

-

100+ parts

$0.259

1k+ parts

$0.215

10k+ parts

$0.192

1,530

-

$0.259

$0.215

$0.192

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 165 parts In-Stock

1+ parts

$0.556

100+ parts

-

1k+ parts

-

10k+ parts

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165

$0.556

-

-

-

IBS Electronics

USA . 450 parts In-Stock

1+ parts

$0.877

100+ parts

-

1k+ parts

-

10k+ parts

$0.281

450

$0.877

-

-

$0.281

Flip Electronics

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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54,000

-

-

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Vyrian

USA . 35,970 parts In-Stock

1+ parts

-

100+ parts

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35,970

-

-

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NAC Semi

USA . 360 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.954

10k+ parts

-

360

-

-

$0.954

-

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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98

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 35,692 parts In-Stock

1+ parts

$0.497

100+ parts

-

1k+ parts

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10k+ parts

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35,692

$0.497

-

-

-

Corphita

USA . 1,557 parts In-Stock

1+ parts

$0.526

100+ parts

-

1k+ parts

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10k+ parts

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1,557

$0.526

-

-

-

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$0.580

100+ parts

-

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65

$0.580

-

-

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Aztec Data Supply Inc.

USA . 175 parts In-Stock

1+ parts

$1.007

100+ parts

-

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175

$1.007

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Perfect Parts

USA . 9,330 parts In-Stock

1+ parts

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9,330

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Kulean Microsystems

USA . 7,774 parts In-Stock

1+ parts

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7,774

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-

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Problanco Electronics

Mexico . 6,473 parts In-Stock

1+ parts

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6,473

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TANS Electronics

Latvia . 5,131 parts In-Stock

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5,131

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Continental Prestige Electronics

USA . 4,093 parts In-Stock

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4,093

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GreenTree Electronics

Israel . 2,490 parts In-Stock

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2,490

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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SupplyDigital Components

Austria . 1,853 parts In-Stock

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1,853

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Argo Parts USA

USA . 605 parts In-Stock

1+ parts

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605

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UHIMA Technologies

Türkiye . 435 parts In-Stock

1+ parts

-

100+ parts

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435

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Overview

Enhance your electronic devices with the NTLUS020N03CTAG by Onsemi, a high-quality Small Signal Field Effect Transistor perfect for switching applications. Manufactured by industry leader Onsemi, this N-CHANNEL transistor offers outstanding performance and reliability. With its built-in diode and enhancement mode operation, this transistor ensures efficient power management and enhanced functionality for your projects. Upgrade your designs with the NTLUS020N03CTAG and unlock a world of possibilities in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high performance and efficiency, making this transistor an excellent choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more versatile use of the transistor, increasing its functionality in different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in controlling electrical signals.

Surface Mount: YES

With surface mount capability, this transistor is easy to solder onto circuit boards, making it suitable for compact electronic designs.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures reliable operation and protects the transistor from electrical overloads.

Package Shape: SQUARE

The square package shape allows for easy integration into circuit layouts, optimizing space efficiency in electronic devices.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the soldering process and minimizes the risk of damage during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides precise control and low power consumption, enhancing the overall performance of the transistor.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options for a wide range of circuit configurations.

Maximum Power Dissipation (Abs): 1.52 W

The high power dissipation capability allows for reliable performance under heavy loads, making this transistor suitable for high-power applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS020N03CTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

5.3 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS020N03CTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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