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NTLUS030N03CTAG

Onsemi

NTLUS030N03CTAG by Onsemi

NTLUS030N03CTAG by Onsemi is a small signal FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 30V min DS breakdown voltage, 4.5A max drain current, and 0.018 ohm max drain-source resistance. Operating in enhancement mode, it has a temperature range of -55 to 150 °C and matte tin terminal finish.

Median Price

$0.900

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,500 parts In-Stock

1+ parts

$0.900

100+ parts

$0.364

1k+ parts

$0.252

10k+ parts

$0.191

2,500

$0.900

$0.364

$0.252

$0.191

Mouser Electronics

USA . 4,534 parts In-Stock

1+ parts

$1.080

100+ parts

$0.438

1k+ parts

$0.303

10k+ parts

$0.175

4,534

$1.080

$0.438

$0.303

$0.175

Chip1Stop

Japan . 2,395 parts In-Stock

1+ parts

$1.540

100+ parts

$0.560

1k+ parts

$0.464

10k+ parts

$0.422

2,395

$1.540

$0.560

$0.464

$0.422

Flip Electronics (Authorized)

USA . 17,722 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,722

-

-

-

-

Rochester

USA . 8,980 parts In-Stock

1+ parts

-

100+ parts

$0.236

1k+ parts

$0.196

10k+ parts

$0.174

8,980

-

$0.236

$0.196

$0.174

Verical

USA . 8,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.218

8,980

-

-

-

$0.218

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,284 parts In-Stock

1+ parts

$0.183

100+ parts

-

1k+ parts

-

10k+ parts

-

1,284

$0.183

-

-

-

Vyrian

USA . 2,388 parts In-Stock

1+ parts

$0.193

100+ parts

-

1k+ parts

-

10k+ parts

-

2,388

$0.193

-

-

-

Flip Electronics

USA . 17,722 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,722

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.265

6,000

-

-

-

$0.265

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,073 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

-

1,073

$0.174

-

-

-

Corohmni

South Africa . 149 parts In-Stock

1+ parts

$0.193

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$0.193

-

-

-

Microchip USA

USA . 8,411 parts In-Stock

1+ parts

$3.485

100+ parts

-

1k+ parts

-

10k+ parts

-

8,411

$3.485

-

-

-

Continental Prestige Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.600

1k+ parts

-

10k+ parts

-

12,000

-

$0.600

-

-

SupplyDigital Components

Austria . 5,497 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,497

-

-

-

-

Kulean Microsystems

USA . 4,404 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,404

-

-

-

-

TANS Electronics

Latvia . 2,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,786

-

-

-

-

UHIMA Technologies

Türkiye . 586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

586

-

-

-

-

Problanco Electronics

Mexico . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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26

-

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-

-

Overview

Enhance your electronic devices with the NTLUS030N03CTAG by Onsemi, a high-quality small signal field-effect transistor that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-channel FET is perfect for switching applications, providing efficient power management and optimal functionality. With a wide operating temperature range and low power dissipation, this transistor ensures long-lasting durability and exceptional performance. Upgrade your circuits with the NTLUS030N03CTAG and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are generally more efficient and have lower on-resistance than P-Channel FETs, making them a good choice for many switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse voltage polarity, adding convenience and reliability to the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low on-resistance, making it ideal for efficient power management.

Surface Mount: YES

Being surface mount compatible allows for easy and convenient assembly onto printed circuit boards, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages and provide better protection against voltage spikes.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the PCB while ensuring proper heat dissipation for improved performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control of the on/off state, making them more suitable for many switch-mode applications.

Maximum Power Dissipation (Abs): 1.49 W

With a high maximum power dissipation, this FET can handle higher power levels without overheating, ensuring reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology provides low input capacitance and high input impedance, resulting in high efficiency and fast response times.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures, making it suitable for harsh environments or high-power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making them a popular choice for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this FET can operate reliably in cold environments or start-up conditions without performance degradation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Maximum Drain Current (ID): 4.5 A

With a high maximum drain current rating, this FET can handle higher current loads, making it suitable for high-power applications that require switching large currents.

Maximum Drain-Source On Resistance: 0.018 ohm

The low on-resistance of 0.018 ohm ensures minimal power losses and high efficiency in switching applications, making this FET an excellent choice for power management.

Terminal Position: DUAL

Dual terminal position adds flexibility for circuit design and allows for convenient connections, making it easier to integrate this FET into various applications.

Case Connection: DRAIN

Having the case connection at the drain terminal simplifies circuit layout and improves thermal performance, ensuring reliable operation in high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature allows for quick and efficient soldering during manufacturing, saving time and reducing production costs.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature of 260 °C, this FET can withstand high-temperature soldering processes without damage, ensuring reliable assembly onto PCBs.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS030N03CTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS030N03CTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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