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NTLUS3192PZTBG

Onsemi

NTLUS3192PZTBG by Onsemi

NTLUS3192PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max ID of 2.2A and 0.085 ohm RDS(ON), it operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology. This SMALL OUTLINE transistor has DUAL terminals and a SQUARE package shape for surface mount assembly.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

35,000

-

$0.277

$0.230

$0.205

Verical

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

35,000

-

-

-

$0.257

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,588 parts In-Stock

1+ parts

$0.217

100+ parts

-

1k+ parts

-

10k+ parts

-

1,588

$0.217

-

-

-

Vyrian

USA . 2,216 parts In-Stock

1+ parts

$0.228

100+ parts

-

1k+ parts

-

10k+ parts

-

2,216

$0.228

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,575 parts In-Stock

1+ parts

$0.205

100+ parts

-

1k+ parts

-

10k+ parts

-

1,575

$0.205

-

-

-

Corohmni

South Africa . 102 parts In-Stock

1+ parts

$0.228

100+ parts

-

1k+ parts

-

10k+ parts

-

102

$0.228

-

-

-

Component Stockers USA

USA . 37,933 parts In-Stock

1+ parts

$0.240

100+ parts

$0.220

1k+ parts

$0.200

10k+ parts

$0.200

37,933

$0.240

$0.220

$0.200

$0.200

Continental Prestige Electronics

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.209

10k+ parts

-

35,000

-

-

$0.209

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Kulean Microsystems

USA . 4,088 parts In-Stock

1+ parts

-

100+ parts

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4,088

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SupplyDigital Components

Austria . 4,067 parts In-Stock

1+ parts

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4,067

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TANS Electronics

Latvia . 4,060 parts In-Stock

1+ parts

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100+ parts

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4,060

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Problanco Electronics

Mexico . 1,147 parts In-Stock

1+ parts

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1,147

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UHIMA Technologies

Türkiye . 623 parts In-Stock

1+ parts

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100+ parts

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623

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Overview

Enhance your electronic projects with the NTLUS3192PZTBG by Onsemi, a high-quality P-CHANNEL Field Effect Transistor ideal for switching applications. With a built-in diode and a maximum drain current of 2.2A, this transistor offers reliable performance in a compact square package. Whether you're designing power supplies, battery management systems, or motor control circuits, this transistor provides enhanced efficiency and durability. Trust Onsemi's expertise in semiconductor technology to deliver superior products that meet your needs. Upgrade your designs today with the NTLUS3192PZTBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow and excellent performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable and fast switching performance.

Surface Mount: YES

Facilitates easy and efficient PCB mounting, saving space and enabling automated assembly.

Minimum DS Breakdown Voltage: 20 V

Withstands high voltages, making it suitable for applications where voltage spikes may occur.

Package Shape: SQUARE

Provides a compact form factor, allowing for efficient use of space on the circuit board.

Terminal Form: NO LEAD

Enables solderless connections, reducing assembly time and simplifying maintenance.

Operating Mode: ENHANCEMENT MODE

Offers better control over the transistor's conductivity, leading to improved efficiency in operation.

No. of Terminals: 3

Provides necessary connections for proper functionality while keeping the design simple.

Package Style (Meter): SMALL OUTLINE

Provides a compact package size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and reliability, ideal for demanding applications.

Transistor Element Material: SILICON

Offers excellent electrical properties and temperature stability for consistent performance.

Terminal Finish: TIN

Ensures good conductivity and solderability, essential for reliable electrical connections.

Maximum Drain Current (ID): 2.2 A

Can handle high current loads, suitable for various applications with demanding power requirements.

Maximum Drain-Source On Resistance: 0.085 ohm

Provides low resistance for efficient power handling and reduced heat generation.

Terminal Position: DUAL

Facilitates easy and secure connections, ensuring proper functionality in the circuit.

Case Connection: DRAIN

Clearly indicates the terminal connection, aiding in correct installation and operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS3192PZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS3192PZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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