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NTLUD3A50PZTAG

Onsemi

NTLUD3A50PZTAG by Onsemi

NTLUD3A50PZTAG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 326 parts In-Stock

1+ parts

$1.370

100+ parts

$0.574

1k+ parts

$0.408

10k+ parts

-

326

$1.370

$0.574

$0.408

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Flip Electronics (Authorized)

USA . 120,000 parts In-Stock

1+ parts

-

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120,000

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-

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Verical

USA . 1,391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.440

10k+ parts

$0.393

1,391

-

-

$0.440

$0.393

Rochester

USA . 1,391 parts In-Stock

1+ parts

-

100+ parts

$0.424

1k+ parts

$0.352

10k+ parts

$0.314

1,391

-

$0.424

$0.352

$0.314

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,908 parts In-Stock

1+ parts

$1.302

100+ parts

-

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1,908

$1.302

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Flip Electronics

USA . 138,000 parts In-Stock

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138,000

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Chip Stock

USA . 24,000 parts In-Stock

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24,000

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Vyrian

USA . 13,018 parts In-Stock

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13,018

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PC Components Company LLC

USA . 3,957 parts In-Stock

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3,957

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Bristol Electronics

USA . 3,957 parts In-Stock

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3,957

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 150 parts In-Stock

1+ parts

$0.830

100+ parts

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150

$0.830

-

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Corphita

USA . 1,588 parts In-Stock

1+ parts

$1.233

100+ parts

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1,588

$1.233

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Assy Fe

Spain . 13,780 parts In-Stock

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13,780

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Perfect Parts

USA . 10,119 parts In-Stock

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TANS Electronics

Latvia . 6,307 parts In-Stock

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6,307

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A-Z Elektronik GmbH

Germany . 4,904 parts In-Stock

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4,904

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Kulean Microsystems

USA . 4,737 parts In-Stock

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4,737

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Problanco Electronics

Mexico . 3,054 parts In-Stock

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3,054

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SupplyDigital Components

Austria . 1,573 parts In-Stock

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1,573

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UHIMA Technologies

Türkiye . 852 parts In-Stock

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852

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S.R.D Solutions

India . 150 parts In-Stock

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150

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Authorized Procurement Solutions

USA . 20 parts In-Stock

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20

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Overview

Enhance your electronic designs with the NTLUD3A50PZTAG by Onsemi, a premium P-CHANNEL Small Signal Field Effect Transistor. Manufactured with top-notch quality and cutting-edge technology, this surface mount transistor offers a maximum drain current of 4.4 A and a maximum power dissipation of 2.2 W, making it ideal for a wide range of applications. Trust in the reliability and efficiency of Onsemi products and elevate your projects with the superior performance and value that the NTLUD3A50PZTAG brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are commonly used for high-side switching applications, making this product versatile and suitable for a variety of circuit designs.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, saving time and reducing manufacturing costs.

Maximum Drain Current (Abs) (ID): 4.4 A

With a high maximum drain current rating, this FET can handle relatively high power loads, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 2.2 W

The low power dissipation of 2.2 W helps prevent overheating, ensuring reliability and longevity of the component.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics, including low leakage current and high input impedance, making this FET efficient and reliable.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for operation in harsh environments without compromising performance or reliability.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring a strong electrical connection and component durability.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds prevents potential damage to the FET during soldering processes, maintaining its performance and integrity.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for proper soldering of the FET onto the PCB, creating a reliable electrical connection for consistent performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUD3A50PZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

4.4 A

Maximum Drain Current (ID):

4.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTLUD3A50PZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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