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NTLUS3192PZTAG

Onsemi

NTLUS3192PZTAG by Onsemi

NTLUS3192PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A ID. Ideal for SWITCHING applications, it features 0.085 ohm RDS(ON) and ENHANCEMENT MODE operation in a SMALL OUTLINE package.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

54,000

-

$0.277

$0.230

$0.205

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

54,000

-

-

-

$0.257

Distributors (In-Stock)

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Digiode

USA . 268 parts In-Stock

1+ parts

$0.217

100+ parts

-

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268

$0.217

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Vyrian

USA . 2,738 parts In-Stock

1+ parts

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2,738

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Distributors (Availability)

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Corphita

USA . 907 parts In-Stock

1+ parts

$0.205

100+ parts

-

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907

$0.205

-

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Corohmni

South Africa . 154 parts In-Stock

1+ parts

$0.228

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154

$0.228

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AZTECH Wire

Italy . 51 parts In-Stock

1+ parts

$16.070

100+ parts

-

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51

$16.070

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Continental Prestige Electronics

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.209

10k+ parts

-

54,000

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$0.209

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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100+ parts

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20,000

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Kulean Microsystems

USA . 3,655 parts In-Stock

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3,655

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SupplyDigital Components

Austria . 2,369 parts In-Stock

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2,369

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TANS Electronics

Latvia . 1,043 parts In-Stock

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1,043

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UHIMA Technologies

Türkiye . 683 parts In-Stock

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683

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Problanco Electronics

Mexico . 664 parts In-Stock

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664

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Overview

Enhance your electronic devices with the NTLUS3192PZTAG by Onsemi, a top-quality P-Channel Small Signal FET. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this transistor is perfect for switching applications. With a built-in diode and a low on-resistance of 0.085 ohm, this transistor offers superior performance and efficiency. Upgrade your products with the NTLUS3192PZTAG and experience the benefits of enhanced functionality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, making it suitable for portable devices.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower ON-state resistance and can operate with positive voltages, making them efficient for certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects the transistor from reverse current, enhancing its reliability.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for controlling currents in electronic circuits.

Surface Mount: YES

Being surface mountable makes the transistor easy to install on circuit boards, saving space and allowing for automated assembly in manufacturing.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, providing more flexibility in circuit design.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a circuit board, enabling compact designs in electronic devices.

Terminal Form: NO LEAD

The absence of leads simplifies the installation process and reduces the risk of lead-related defects, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode means that the transistor is normally off and requires a specific voltage to turn on, offering control over the switching process.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits, providing flexibility in the configuration and usage of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and offers compatibility with various electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology enhances the transistor's performance in terms of speed, power efficiency, and voltage handling capabilities.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability, stability, and compatibility with a wide range of electronic systems, ensuring long-lasting operation.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and solderability, ensuring secure connections and reliable performance over time.

Maximum Drain Current (ID): 2.2 A

With a maximum drain current of 2.2A, this transistor can handle higher currents, making it suitable for applications that require switching of moderate to high power loads.

Maximum Drain-Source On Resistance: 0.085 ohm

The low drain-source on resistance of 0.085 ohms reduces power loss and heat generation in the transistor, improving efficiency and performance.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and installation, accommodating different configurations for specific application requirements.

Case Connection: DRAIN

The drain connection is important for controlling the flow of current in the transistor, ensuring proper functionality and performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTLUS3192PZTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUS3192PZTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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